2SB1477 Search Results

New Jersey Semiconductor

Contextual Info: 'j£ti£iJ ^zmi-Conductoi Lpioduati, One. U C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SB1477 • -^ DESCRIPTION ^ • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.)

Contextual Info: 2SB1477 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SB1477

Abstract: 2SD2236
Contextual Info: SavantIC Semiconductor Product Specification 2SB1477 Silicon PNP Power Transistors DESCRIPTION •With TO-247 package ·Complement to type 2SD2236 ·Wide area of safe operation APPLICATIONS ·For drvier and general purpose applications PINNING PIN DESCRIPTION

2SB1477

Abstract: 2SD2236
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1477 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 APPLICATIONS ·Designed for driver and general purpose applications.

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD2236

Abstract: PESI
Contextual Info: Transistors TO-247 TO -220 class high output power package with Pc 60 to 100W. AudioOutput Low Vc e sat High Voltage SW Darlington _ (Unit : mm) (V) Ic (A) ☆2SB1477 -1 0 0 -5 60 60—320 -5 -1 - ☆2SB1345 -8 0 -7 80 60—320 -5

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

250A darlington transistor

Abstract: 2SC4847 2SA1633 2SA1788 2SB1345 2SB1477 2SC4278 2SC4652 2SC4653 2SD2062
Contextual Info: Transistors TO-247 TO -220 class high output power package with Pc 60 to 100W. Application Driver AudioOutput Low Versât High Voltage SW Darlington VCEO V) Part No. (Unit. mm) TO-247 Pc (W) (A) Tc = 25'C hFE h|=E Rankingcode VCE {V} lc (A) circuit ☆2SB1477

PHUI

Abstract: 2sd2062
Contextual Info: T ransistors TO-247 TO -220 class high output power package with Pc 60 to 100W. A pplication Part No. Driver AuoioO utput Low V cd sat High Voltage SW Darlington Pc W) VcEO h |E (Unit : mm) ^FE Rarfung code VcE (V) :v) (A) T c = 25°C ☆2SB1477 -1 0 0 -5

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SC485

Abstract: 250A darlington transistor 2SA1633 2SA1788 2SA1789 2SB1477 2SC4278 2SC4652 2SC4653 2SC4847
Contextual Info: Transistors TO-247 TO-220 class high output power package with Pc 60 to 100W. Application VcEO V Part No. AudioOutput Low Versât) Darlington hFE h|=E Ranking code TO-247 VCE (V) lc (A) circuit ☆2SB1477 -1 0 0 -5 60 60—320 D E F -5 -1 - ☆2SB1345 -8 0