2N101 Search Results

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

Contextual Info: $ E - tfn ? n z lì£ ]J A rm s [jg p ^ ^ ,( Q ]V rm s A C 'J L '— m D 2N101LF D 2N 101LG D 2N 201LF D 2N 201LG « (C R * * v < r t * D 2N201LF18 D 2 N 2 0 1 LG 1 8 « fè N O . (BittPJO) U L : E69031 CSA : LR48894 T'U V : R75168/R85137 I i : ( i i i )

2N1011

Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136

2N1016

Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,

Contextual Info: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.

2n1016

Abstract: 2n2739
Contextual Info: POW ER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS le B V cbo B V ceo B V ebo V A V V Watts < 25°C hFE MIN MAX ì> V CE le V A Test Sat Voltages Conditions Ib le V CE V be A A V V Iebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2n1016

Contextual Info: , Line. <~>E.ml-L-ona.u.cko'i u-^i 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN POWER TRANSISTROS 2N1015/2N1016 Inches . Mm. iymbo A 08 d 0D 0D, <t>0, e e, H Min. Max. .560 .060 .170 12.70

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

transistor kc 2026

Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
Contextual Info: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,

nkt270

Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
Contextual Info: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385

Contextual Info: 2N101 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)70’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1012 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)22 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.40 h(FE) Max. Current gain.

2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Contextual Info: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­

2N1011

Abstract: marking 67A
Contextual Info: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

delco

Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

Contextual Info: POWER TRANSISTORS TYPE NO. TO-82 *•* _ PT MAXIMUM RATINGS m 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX * A Va V le Sat Voltages Va V« V V Test Conditions le fa I ebo A ma A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

2n1016

Abstract: 2N2752 JAN2N1016B
Contextual Info: POWER TRANSISTORS PT TYPE NO. SECTION 3 TO-82 M AXIM UM R A TIN CS B V c b o B V ceo BV ebo le V V V A Watts @ 25°C Sat Voltages WE MIN MAX Ic V ce V ce V be Ic Ib I ebo A V V V A A ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

Contextual Info: 2N1010 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)2.0m Absolute Max. Power Diss. (W)20m Maximum Operating Temp (øC)55õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1018 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)4.0u @V(CBO) (V) (Test Condition)1.5 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

D2N201LE

Abstract: D2N101LE D2N201LD D2N201LD18 D2N201 975mm d2n20ild
Contextual Info: mmtèrnm. y Arms UglDjgg^JiPVrms A C J U — m % C R ^ /x 'r tJK U L : E69031 CSA : LR48894 (BÌttP.30) TUV : R75Ì68/R85137 m n & 'à : D 2N 101LD D 2N101LE D 2N201LD D 2N 201LE D 2N 2 0 1 LD 1 8 D2N201 L E I 8 S ìtè N O . lO g H UL CSA ¡3$ /È PO TUV

TO82 TRANSISTOR

Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C