60MIL Search Results

Contextual Info: TaN The T1206 resistor chips on Ceramic are designed for surface-mount applications. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. Small chip size 120mil x 60mil

TO111 package

Abstract: TO61 package TO63 package MOSFET F24 S06 rectifier
Contextual Info: PACKAGE OUTLINE DRAWINGS TO-18 PACKAGE TO-5 PACKAGE —seâtaao h i m TO-33 PACKAGE 0Ct9 t?s 1 tf— II i-t 4'fiC> ?y H TO-72 PACKAGE TO-3 PACKAGE MODIFIED TO-3 PACKAGE 60mil pins SE* Ft t -L SEATU 'i "01I6 02' °’6 .225 205 JO -66 PACKAGE F-24 PACKAGE

Contextual Info: SPECIFICATIONS Mechanical Contact Normal Force: 50gf min. Durability: 300 Cycles Contact Retention Force: 0.45kg min. Docking Connector EI Series SMT Type, 2.0mm [.079"] Pitch 44 PIN. Electrical Current Rating: 1.0A, 30℃ Rise above Ambient Contact Resistance: 60MILLIOHMS MAX.

Contextual Info: ITI I N E TO-3 PACKAGE 1=7 1 TO-5 PACKAGE TO-39 is TO-5 with 0.50 Min leads 305 370 . >3 M*» MOOfFMED TO-3 PACKAGE (60mil pins) D R A W IN G S U 1 009 125 S E A T IN G P L A N E _ I \ . 450 250 “T I SO M IN 1s a M A X IV ^ B O T H ENDS 03 4 n?a 'V Collector is connected to case.

resistor 90k

Contextual Info: FEATURES The T1206 resistor chips on Ceramic are designed for surface-mount applications. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. • Small chip size 120mil x 60mil

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

AH420-EPCB900

Abstract: AH420-EPCB2140
Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2400 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with up to -45 dBc ACLR and

T25C

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

V18MLN41206L

Abstract: V9MLN41206 V14MLN41206 V18MLN41206 5MLN41206
Contextual Info: Varistor Products Surface Mount Multilayer Varistors MLVs > MLN Series RoHS MLN SurgeArray Suppressor Description SurgeArray™ devices are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage

SDT96309

Abstract: sdt96
Contextual Info: -j/otttron_^ Eom gir ©at&ìl©© S W IT C H T R O N P O W E R T R A N S IS T O R S Devices. Inc DEVICE POLARITY TYPE v C EO su s 'C ( P .i k ) hpj; & 'c VC E (sat) ifM H j PT (W ) V O LTS AM PS MIN/MAX AM PS M AX. A M PS MIN. MAX 30

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

UGN 3140 sensor

Abstract: 3140u UGN-3140U 3140u hall effect switches UGN3140U UGS3140U UGS-3140U UGN 3140u sensor UGN-3140T 50G HALL SENSOR
Contextual Info: I UGN-3140T/U AND UGS-3140T/U SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES U G N -3140T/U A N D U GS-3140T/U U LTR A -SEN SITIV E H A LL EFFECT SW ITCHES FEATURES • • • • • • FUNCTIONAL BLOCK DIAGRAM 4.5 V to 24V Operation High Reliability— No Moving Parts

Contextual Info: MA02203AD 3.6V 450mW RF Power Amplifier IC for DECT Applications Features DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) N/C N/C +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C •= •= •= •= •=

50g k hall

Abstract: 50G HALL Sensor UGN3119U Hall Effect 3 pin ugn A12062 UGN-3119U UGS-3119U Sprague Hall Effect hall current sensor 3A UGN-3119T
Contextual Info: OSPROGUE_ _ _ _ _ _ _ _ _ _ T H E M A RK OF RELIABILITY U G N -3119T U G N -3 119U UGS-3119T DATA SHEET 27621 HALL EFFECT SWITCHES FEATURES • • • • • • 4 .5 V to 24V Operation High Reliability— No Moving Parts Constant Output Amplitude Output Compatible with All Digital Logic Fam ilies

1008CS

Abstract: C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S
Contextual Info: 4.6V 1.2W RF Power Amplifier IC for AMPS ITT333106BD Applications Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG • • • • • • • Class AB Bias 750 to 900 MHz Operation

V14MLN41206

Abstract: V18MLN41206 V18MLN41206L V9MLN41206 EIA3216 chip varistor
Contextual Info: Varistor Products Surface Mount Multilayer Varistors MLVs > MLN Series MLN SurgeArray Suppressor RoHS Description SurgeArray™ devices are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage

RF2173

Abstract: RF2119 AD 928
Contextual Info: RF2119 2 HIGH EFFICIENCY 2V POWER AMPLIFIER Typical Applications • Two-Way Pagers • 3V AMPS/ETACS Cellular Handsets • 915MHz ISM Band Equipment • CDPD Portable Data Cards • Spread-Spectrum Systems • Personal Digital Cellular -A- 3.90 ± 0.10 SiGe HBT

power diodes with V-I characteristics

Abstract: V9MLA0402 V9MLA0402L V9MLA0603 V9MLA0805L 0402-size v120mla1210
Contextual Info: ML Series Data Sheet Multilayer Surface Mount Transient Voltage Surge Suppressors The ML Series is a family of Transient Voltage Surge Suppression devices based on the Littelfuse Multilayer fabrication technology. These components are designed to suppress a variety of transient events,

V14MLN41206

Abstract: V18MLN41206 V18MLN41206L V9MLN41206
Contextual Info: Varistor Products Surface Mount Multilayer Varistors MLVs > MLN Series MLN SurgeArray Suppressor RoHS Description SurgeArray™ devices are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage

gsm signal amplifier circuit diagram

Abstract: abstract for wireless communication system gsm with pic 48vdc schematic diagram TRF7003 Architecture of TMS320C54X with diagram trf8xxx AUDIO MOSFET POWER AMPLIFIER SCHEMATIC schematic diagram TRF8011 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Contextual Info: Evaluation Board Documentation TRF8011 and 2 X TRF7003 RF Power Amplifier 4.8 Volts GSM Application APPLICATION BRIEF: SWRA013 Wireless Communication Business Unit Digital Signal Processing Solutions March 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

MO-127

Abstract: header pin dimensions MO127
Contextual Info: r .27 [6.8] j- . 0 9 3 i. 0 0 3 I III" [2.36Ì0.08] T £ 7 .0021 -A- .475±.025 [12.07±0.64] _ L 0.O6OÌ.OO2 [1.52±0.05] TYP. —• 1.61 0.1 56 + .002 [03.96+0.05] 2 PLACES [40.9] .32 [8.1] 0.10 [02 B B R.175 [R4.45] TYP. 1.200 30.48] 1.63 .815 [20.70]

9.3GHz filter

Abstract: ALA7606 ATA7603 ATA7609 ATA7609D1 photodiode die WAFER
Contextual Info: ATA7609 10 Gb/s High Overload TIA PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • 1800 Ω Differential Transimpedance • 3 mApp Maximum Input Current • 14 pA/√Hz Input Noise Current Density • Single –5.2 V Power Supply GND • Low Group Delay • Outputs DC or AC Coupled

1008CS

Abstract: 1008CT M513 MA02203AD MAAM-007219 MAAM-007219-000000 MAAM-007219-TR3000 SOIC-16
Contextual Info: RoHS Compliant 3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz Features • • • • • • • • • • • MAAM-007219 V1 Functional Schematic Ideal for DECT Applications Output Power: +26.5 dBm Power Gain: 24.5 dB Single Positive Supply

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power