BD249C EQUIVALENT Search Results

BD249C EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description	Download
TMP89FM42UG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B	Datasheet
TMP89FM42LUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B	Datasheet
TMP89FS28LFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D	Datasheet
TMP89FS62BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003	Datasheet
TMP89FM42KUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B	Datasheet

BD249C EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor pnp a110 Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	bd249c bd249c/d transistor pnp a110 free transistor and ic equivalent data +1transistor pnp a110 equivalent	PDF
bd249c equivalent Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C Contextual Info: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	bd249c o-218 mje180 c-2688 +4bd249c equivalent c2688 c2688 transistor transistor c2688	PDF
BD249C equivalent Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	bd249c bd249c/d bd249c equivalent 400 watts amplifier circuit diagram +810 amp npn power transistors 1000 watt amplifier amp contact assembly to-218 npn 1.5 amps power transistor pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram	PDF
bd249c equivalent Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2 Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	bd249c bd249c/d bd249c equivalent c2688 +3free transistor and ic equivalent data mje180 20 l2	PDF
bd249c equivalent Contextual Info: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	bd249c o-218 bd249c/d bd249c equivalent	PDF
TIC106D equivalent Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	o-220 ot-93 2m/tsp0711 tic106d equivalent +9tic106m scr bd249 equivalent tip41c equivalent bt137 equivalent replacement tyn412 tic225m equivalent malaysia tic226d tic226d equivalent tic126m equivalent	PDF
TIC106M SCR Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	o-220 ot-93 2m/tsp0904 tic106m scr +9tic106d equivalent tip41c equivalent tip42c equivalent bd242 transistor equivalent transistor equivalent of bu406 tip36c equivalent btb06-600 tic126d equivalent tic116d equivalent	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2n5655 2n5656 2n5657 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b 2n5657 equivalent 2sa1046 bu326 bu108 bu100 2sc2331 y tip47 419 2n3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	bd157 bd158 bd159 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b mje494 2sc1419 bd 804 2sd675 mje104 bd581 bd135 curves mj1000 dts-4041 2n5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2n6609 2n3773 2n6667 2n6668 +13220ab 2n6387 2n6388 2sd669 equivalent bd801 bdy29 equivalent bu108 2sc2080 2sd436 2n6021 bd345 tip122 d-pak package 2sd544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	mjf6107 2n6107 e69369 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b 2sc495 nsp41a bu108 transistor bd614 motorola 2sa663 bd4122 bd661 mj1000 nsp2100 d45vh4 similar	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	mje521 mje371 tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c mje521 equivalent bu108 2n3055 plastic 2n6488 motorola motorola transistors mje3055 to 127 3904 transistor bdx54 tip122 tip127 audio amp bu326 bu100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	mje2955t mje3055t tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c 2n3055 bu108 an415a mje2955t st bdx54 2n3055 audio amplifier application note bu326 bu100 mje13005 bdv64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2n5630 2n6030 2n5631 2n6031 +102n5631 equivalent 2n5630 "cross-reference chomerics bu108 2sa1046 tip122 tip127 audio amp bu326 bu100 2sd313 equivalent npn/tip42c as regulator	PDF

sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	mjl3281a mjl1302a tip73b tip74 +14tip74a tip74b tip75 tip75a sec tip41c mje493 2sc1419 2sc3281 2n3055 audio output circuit bdw93 mj1000 bdw83 buv98a cross reference 2sc1943	PDF
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	tip47 e69369 mjf47 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b transistor bc 384 bu108 bd139 equivalent transistor 2n3055 equivalent rca1c03 transistor bc 574 bu326 bu100	PDF
MJ11017 equivalent Abstract: BU108 MJ11021 BU326 BU100 MJE3055T Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types	Original	mj11018 mj11022 mj11017 mj11021 +9tip73b tip74 tip74a tip74b mj11017 equivalent bu108 bu326 bu100 mje3055t	PDF
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	buv21 tip73b tip74 tip74a +16tip74b tip75 tip75a tip75b tip75c 2n6488 bu108 transistor bc 574 2n6107 motorola 2sc1943 mj3055 to220 2sc1419 bu326 bu100 mj*15033 2n6277	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	bd136 bd138 bd140 bd140-10 +16tip73b tip74 tip74a tip74b tip75 tip75a pin configuration transistor bd140 2sd669 equivalent buv44 bd140 equivalent transistor mje15020 bd140 equivalent bd250c equivalent rca122 2n6045 npn power darlington transistor bd 136	PDF
BU108 Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:	Original	bu522b tip73b tip74 tip74a +14tip74b tip75 tip75a tip75b tip75c 2n6488 bu108 bc337 circuit example bc337 rbe bdx54 replacement transistor bc337 bu326 bu100 motorola 2n3773	PDF
tip122 tip127 audio amp Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power	Original	mj3281a mj1302a 204aa tip73b +14tip74 tip74a tip74b tip75 tip122 tip127 audio amp bu108 k 3569 d44h1 tip120 mj1302a equivalent 2sb595 bdx54 bu326 bu100	PDF
Motorola transistor 388 TO-204AA Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —	Original	2n6030 2n6031 2n5630 2n6035 +142n6038 2n6036 2n6039 225aa motorola transistor 388 to-204aa 714 ic bc 458 2sc124 bu108 bu326 2sa1046 2sc7 bdx54 2sd214	PDF
mj11015 equivalent Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor	Original	tip73b tip74 tip74a tip74b +16tip75 tip75a tip75b tip75c 2n6488 2n6490 mj11015 equivalent mj11016 equivalent 2sc1096 equivalent nsd15 mj3237 bu108 bd875 equivalent mj4502 equivalent 2sd718 2sb688 amplifier schematic sdn6000	PDF
2N6124 Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp	Original	2n4921 2n4922 2n4923 2n4918 +152n4920 tip73b tip74 tip74a tip74b tip75 2n6124 334 bdw93c 2n4920r bu108 2sa1046 tip127 tip122 audio amplifier circuit 2sa981 equivalent bu806 complement bdx54	PDF

BD249C EQUIVALENT Search Results

BD249C EQUIVALENT Result Highlights (5)

BD249C EQUIVALENT Datasheets Context Search

transistor pnp a110

bd249c equivalent

BD249C equivalent

bd249c equivalent

bd249c equivalent

TIC106D equivalent

TIC106M SCR

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

mje521 equivalent

2N3055

2N5631 equivalent

sec tip41c

TRANSISTOR BC 384

MJ11017 equivalent

BU108

pin configuration transistor bd140

BU108

tip122 tip127 audio amp

Motorola transistor 388 TO-204AA

mj11015 equivalent

2N6124