2SD214 Search Results

2SD2142

Contextual Info: 2SD2142 NPN Plastic Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR FEATURES z Darlington connection for a high hFE z High input impedance 1.BASE 2.EMITTER A

Contextual Info: Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2143 / 2SD1866 z Dimensions (Unit : mm) 1.5 5.5 (2) 5.1 2.3 (1) 0.9 0.75 2SD2143 6.5 zFeatures 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2142K

Abstract: 2SA1759 T146
Contextual Info: 2SD2142K Transistors High-gain Amplifier Transistor 30V, 0.3A 2SD2142K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2) High input impedance. SMT3 2.9 1.1 0.4 0.8

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2sd2397

Abstract: 2SD1866 2SD2143 2SD2212 T100 diode zener c05 transistor collector diode protection
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !External dimensions (Units : mm) 2SD2212 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Built-in zener diode between collector and base.

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

A968A

Abstract: 2SD2140 2SB1372
Contextual Info: Power Transistors bTBEñSM DD11377 TT7 •PNCE PANASONIC INDL/ELEKÍ SEMI 2SD2140 2SD2140 h^E D Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 U n it : 15.5max. ■ Features • V e r y good lin e a rity o f D C c u rre n t gain

Contextual Info: 2SD2142K Transistors High-gain Amplifier Transistor 30V, 0.3A 2SD2142K zDimensions (Unit : mm) zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2) High input impedance. SMT3 2.9 1.1 0.4 0.8 (3) 1.6

2SB1421

Abstract: 2SD2140
Contextual Info: Power Transistors 2SD2140 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1421 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

STA508A

Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w
Contextual Info: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567

Contextual Info: Is ~7 > V 7. £ / I ransistors 2SD2132 2SD2144S 2SD2132/2SD2144S NPN '> • ; = ! > h 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistors • W f^THiEfl/Dim ensions Unit: mm 1) hFE hFE=1200 (Typ.)o 5 v 2 • 2) I Vebo = 12V (Min.) 3) U L F bI I MP I H Vce (sa t)*'" ^

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

2SD1856

Abstract: 2SD1764 2SD1866 2SD2143 2SD2212 94L-885-D87
Contextual Info: Transistors 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 96-762-D84 (94L-885-D87) 321

2SD2148

Contextual Info: SavantIC Semiconductor Product Specification 2SD2148 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·High speed switching power supply output applications PINNING

2SD2142

Contextual Info: 2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. High input impedance. A L 3 3 C B Top View MARKING

Contextual Info: 2SD2142K Transistors High-gain Amplifier Transistor 30V, 0.3A 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2) High input impedance. SMT3 2.9 1.1 0.4 0.8 (3) 1.6 2.8

2SD2470

Contextual Info: 2SD2142 K / 2SC2062S 2SD2470 Transistors I High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S •F e atu res • A b so lu te maximum rating« (Ta=25°C) 1 ) Darlington connection for a high hre. (Min. 5 0 0 0 at V ce /Ic =3 V /0 .1 A ) 2 ) H igh input im pedance.

2SB1421

Abstract: 2SD2140
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1421 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2140 APPLICATIONS ·Designed for high power amplifications.

2SD2470

Abstract: 2SD2142K 2SC2062S
Contextual Info: Transistors 2SD2142K / 2SC2062S 2SD2470 94L-570-D25 (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

MN638S

Abstract: STA464C SPF0001 2SD2633 Solenoid Drivers STA464 SLA8004 STA415A airbag SDK08
Contextual Info: Transistors and MOS FETs Index by Application Application 64 Part No. Page Igniters 2SD2141 MN638S 74 80 Injectors 2SC4153 2SD2382 MN611S STA461C STA463C STA464C STA508A SDC09 SDK09 SPF0001 73 75 79 84 85 86 99 90 105 91 AT Automatic Transmissions 2SA1488

Contextual Info: Medium Power Transistor Motor, Relay drive (6010V, 2A) 2SD2143 1.5 (2) 5.1 2.3 (1) 5.5 6.5 0.75  Dimensions (Unit : mm) 0.9 Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads.

2SD1866

Abstract: 2SD2143 2SD2212 2SD2397 T100
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60+1OV, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"