bd249
Abstract: BD249C bd249a
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD250 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current
|
OCR Scan
|
bd249bd249abd249bbd249c+2bd250ot-93
|
PDF
|
BD249
Abstract: BD249C transistor BD249 b BD249 EQUIVALENT BD249A BD249B BD250
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available
|
Original
|
bd249bd249abd249bbd249c+4bd250ot-93transistor bd249 bbd249 equivalent
|
PDF
|
bd249c equivalent
Contextual Info: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W
|
Original
|
bd249co-218bd249c/dbd249c equivalent |
PDF
|
BD249
Abstract: BD249 EQUIVALENT BD249C transistor BD249 b BD249A BD249B BD250
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available
|
Original
|
bd249bd249abd249bbd249c+4bd250ot-93bd249 equivalenttransistor bd249 b
|
PDF
|
bd249c equivalent
Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C
Contextual Info: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W
|
Original
|
bd249co-218mje180c-2688+4bd249c equivalentc2688c2688 transistortransistor c2688
|
PDF
|
BD249 TEXAS INSTRUMENTS
Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
Contextual Info: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P
|
OCR Scan
|
bd249bd249abd249bbd249c+10bd250a-cbd149a40pepbd249 texas instrumentsbd149bd249c texas instrumentsb0249cb0249a3055 5c pnp transistorb0249
|
PDF
|
transistor BD249 b
Abstract: transistor BD249C BD249C
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available
|
Original
|
bd249bd249abd249bbd249c+5bd250ot-93sas635abtransistor bd249 btransistor bd249c
|
PDF
|
BD249
Abstract: BD249C
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available
|
Original
|
bd249bd249abd249bbd249c+3bd250global/pdfs/tsp1203ot-93
|
PDF
|
bd249
Abstract: BD249 EQUIVALENT bd249 equivalents BD249A BD249B BD249C BD250
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current
|
Original
|
bd249bd249abd249bbd249c+4bd250ot-93bd249 equivalentbd249 equivalents
|
PDF
|
BD250C
Abstract: BD249C
Contextual Info: BD249C / BD250C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO sus = 100V (Minimum) • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.
|
Original
|
bd249cbd250c |
PDF
|
B0249C
Abstract: bd249 BD249C
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright <D 1997, Power Innovations Limited, UK « JUN E 1973 * REVISED M ARCH 1997 Designed for Complementary Use with the BD250 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current
|
OCR Scan
|
bd249bd249abd249bbd249c+3bd250ot-93b0249c
|
PDF
|
BD249C
Abstract: BD250C
Contextual Info: BD249C, 250C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO sus = 100V (Minimum) • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.
|
Original
|
bd249cbd250c |
PDF
|
transistor pnp a110
Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125
|
Original
|
bd249cbd249c/dtransistor pnp a110free transistor and ic equivalent data+1transistor pnp a110 equivalent
|
PDF
|
BD249C equivalent
Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125
|
Original
|
bd249cbd249c/dbd249c equivalent400 watts amplifier circuit diagram+810 amp npn power transistors1000 watt amplifieramp contact assemblyto-218npn 1.5 amps power transistorpulse transformer 218free transistor and ic equivalent data500 watt power circuit diagram
|
PDF
|
|
|
bd249c equivalent
Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125
|
Original
|
bd249cbd249c/dbd249c equivalentc2688+3free transistor and ic equivalent datamje18020 l2
|
PDF
|
TIC106D equivalent
Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
|
Original
|
o-220ot-932m/tsp0711tic106d equivalent+9tic106m scrbd249 equivalenttip41c equivalentbt137 equivalentreplacement tyn412tic225m equivalentmalaysia tic226dtic226d equivalenttic126m equivalent
|
PDF
|
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
|
Original
|
2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
|
PDF
|
bd639
Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul
|
OCR Scan
|
o-22oab0-25ab0239bd239a+15bd239bb0239cbd240bd240abd240bbd240cbd639bd640bf467b0544bd639 npnb0250cbd546dbd243b0546
|
PDF
|
transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
|
Original
|
transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a
|
PDF
|
k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
|
Original
|
mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
|
PDF
|
BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
|
Original
|
2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
|
PDF
|
triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
|
OCR Scan
|
sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
|
PDF
|
2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
|
Original
|
2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
|
PDF
|
MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
|
Original
|
bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
|
PDF
|
