LS01130 Search Results

pn4122

Abstract: PN3569 2N4402 2N4403 PN4250 MMBT4402
Contextual Info: bflE D • LS01130 003^520 Tb7 « N S C S General Purpose Amplifiers and Switches continued Devices (Volts) Min 40 ‘ NPN h fE@ lc k V CE0(smt) • ' PN P - - (mA) Max Min M ax NATL SENICON]) (DISCRETE ) fT @ lc mA (M Hz) Min mA MF (dB) Max P D (Amb) Package

NZT6714

Abstract: TN6714A
Contextual Info: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.

NZT6729

Abstract: TN6729A
Contextual Info: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.

DIODE 3L2

Abstract: Complementary MOSFET Half Bridge
Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to

supersot-3

Abstract: 2T3 transistor NDS335N FR 014 S0113D
Contextual Info: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

L50Q

Abstract: BCW65C
Contextual Info: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.

2n3904 spice model

Abstract: 2N3904 equivalent 2N3904 2n3904 spice model of 2n3904 MMBT3904 2N39041 2N3904 b10 50113G L50113
Contextual Info: 2N3904 MMBT3904 SOT-23 B Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 M H z as an amplifier. Sourced from Process 23.

FLC 100

Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Contextual Info: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

transistor t04 76

Abstract: GV 475 diode transistor T04 NDB6060 004027S
Contextual Info: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

BSS63

Contextual Info: BSS63 Discrete POW ER & Signal Technologies A National Semiconductor" BSS63 Mark: T3 PNP General Pupose Amplifier This device is designed for general purpose am plifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum RatinQS*

Contextual Info: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)

diode e 1205

Abstract: mmbd1201
Contextual Info: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage

NDS9936

Abstract: Vi46 ab-1 national
Contextual Info: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

PN4860

Abstract: PN4857 2N5639 J106 PN4858 2N5555 2N5638 2N5640 J105 J107
Contextual Info: N o. P kg . Signal T T r^ t ? ? ? ? 00 ^ in t" io ^ io CM CM CM CM O O) o CM CM CN CM O O O O CM CM CM CM 0) 0 ) 0 0) CM CM CN CN 0)0 in in in in in in in in in o ^ <5 q o to in co 2 2 in ^ o m 2 2 2 s £ ! °9 <9 _ O _ O _ O CN *- o o o in s in « in 50

mpsa42 "sot23"

Abstract: MMBTA42 MARK MPSA42 NATIONAL NATIONAL MPSA42 BD004 National semi spice model MPSA42 sot
Contextual Info: MPSA42 / MMBTA42 / PZTA42 e? Discrete POWER & Signal Technologies National Semi conductor' PZTA42 MMBTA42 MPSA42 SOT-23 B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color C RT and other high voltage applications. Sourced

common collector amplifier circuit designing

Abstract: bd113 npn 4111 25CC TN3019A
Contextual Info: Semiconductor"1 TN3019A D iscrete P O W ER & S ig n a l Technologies ALM National TN3019A c TO-226 Bc NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12.

NDT452AP

Contextual Info: June 1996 National Semiconductor" NDT452AP P-Channel Enhancement Mode Field Effect Transistor Features General Description • -5A, -30V. RDS 0N1 = 0 .0 650 @ VGS = -10V RDS(0N1 = 0.1 n @ V GS = -4.5 V. These P-Channel enhancement mode power field effect transistors are produced using National's

2N5087 equivalent

Abstract: 2N5086 2N5087 MMBT5086 MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087
Contextual Info: 2N5086 / MMBT5086 1 2N5087 I MMBT5087 Discrete POWER & Sign al Technologies National f i Semiconductor" MMBT5086 MMBT5087 2N5086 2N5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose am plifier applications at collector currents to 50 mA.