IC110 Search Results
IC110 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TLV320AIC1107PWR |
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PCM CODEC (A-Law) with Microphone & 8-ohm Speaker Amplifiers 20-TSSOP -40 to 85 |
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| TLV320AIC1107PW |
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PCM CODEC (A-Law) with Microphone & 8-ohm Speaker Amplifiers 20-TSSOP |
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| TLV320AIC1103PBS |
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Programmable PCM Codec With Microphone Amps & Speaker Driver 32-TQFP -40 to 85 |
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| AMIC110BZCZA |
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Sitara Processor: Arm Cortex-A8, 10+ Ethernet protocols 324-NFBGA -40 to 105 |
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| TLV320AIC1106PW |
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PCM Codec With Microphone Amps & Speaker Driver 20-TSSOP -40 to 85 |
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IC110 Price and Stock
Vishay Intertechnologies MBB0207IC1100FC100Resistor Professional Metal Film 110 Ohm 1% 2/5W ?50ppm/K Ceramic Axial T/R - Ammo Pack (Alt: MBB0207IC1100FC100) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBB0207IC1100FC100 | Ammo Pack | 5 Weeks | 1,000 |
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Buy Now | |||||
Vishay Intertechnologies MBB0207IC1104FC100Resistor Professional Metal Film 1.1M Ohm 1% 2/5W ?50ppm/K Ceramic Axial T/R - Ammo Pack (Alt: MBB0207IC1104FC100) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBB0207IC1104FC100 | Ammo Pack | 5 Weeks | 1,000 |
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Buy Now | |||||
Vishay Intertechnologies MBB0207IC1101FC100Resistor Professional Metal Film 1.1k Ohm 1% 2/5W ?50ppm/K Ceramic Axial T/R - Ammo Pack (Alt: MBB0207IC1101FC100) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBB0207IC1101FC100 | Ammo Pack | 5 Weeks | 1,000 |
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Buy Now | |||||
Vishay Intertechnologies MBB0207IC1102FC100Resistor Professional Metal Film 11k Ohm 1% 2/5W ?50ppm/K Ceramic Axial T/R - Ammo Pack (Alt: MBB0207IC1102FC100) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBB0207IC1102FC100 | Ammo Pack | 5 Weeks | 1,000 |
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Buy Now | |||||
Vishay Intertechnologies MBB0207IC1100FRP00Resistor Professional Metal Film 110 Ohm 1% 2/5W ?50ppm/K Ceramic Axial T/R - Tape and Reel (Alt: MBB0207IC1100FRP00) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBB0207IC1100FRP00 | Tape & Reel | 5 Weeks | 5,000 |
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MBB0207IC1100FRP00 |
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IC110 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXGH32N60C
Abstract: 32N60C IXGH32N60
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Original |
32n60cic110o-268o-247+2 | |
IXGH30N60B
Abstract: IXGT30N60B
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Original |
ixgh30n60bixgt30n60bic110o-247+1 | |
IXXH100N60B3
Abstract: 100n60
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ixxh100n60b3ic110150nso-247+3 | |
IXGH72N60C3Contextual Info: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient |
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ixgh72n60c3ic11040-100khz72n60c3+1 | |
IXBL64N250Contextual Info: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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ixbl64n250ic11064n2505-10-a | |
IXGK55N120A3H1
Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
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ixgk55n120a3h1ixgx55n120a3h1ic110o-264+3 | |
8-8NSContextual Info: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings |
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ixgh30n60b4ic110o-247338b2+1 | |
IXGR50N160H1Contextual Info: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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ixgr50n160h1ic110isoplus247tm338b2 | |
IXGN200N60B3
Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
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ixgn200n60b3ic1105-40khzot-227b+8 | |
IXBX64N250
Abstract: IC100 IXBK64N250 PLUS247
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ixbk64n250ixbx64n250ic110o-264+4 | |
IXYH82N120C3
Abstract: DS100335
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ixyh82n120c3ic110o-247062in+2 | |
8n90c
Abstract: 8n90 IXYP8N90C3 IGBTS
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ixyy8n90c3ixyp8n90c3ic110130ns+6 | |
IXYH50N120C3Contextual Info: Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
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ixyh50n120c3ic110o-247062in+1 | |
IXGJ50N60C4D1
Abstract: G50N60
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ixgj50n60c4d1ic110o-247tme153432+4 | |
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40N90C3D1Contextual Info: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
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ixyh40n90c3ic110110nso-247+2 | |
30N60B3DContextual Info: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M |
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ixxh30n60b3d1ic110125nso-247+3 | |
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Contextual Info: IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
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ixxk110n65b4h1ixxx110n65b4h1ic11010-30khz+4 | |
IXXH50N60B3D1Contextual Info: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M |
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ixxh50n60b3d1ic1105-30khz135ns+2 | |
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Contextual Info: Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH100N65C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 100A 2.30V 50ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M |
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ixyh100n65c3ic11020-60khzo-247+1 | |
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Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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ixgn120n60a3ixgn120n60a3d1ic110ot-227b+3 | |
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Contextual Info: Advance Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 30A 2.7V 37ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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ixyh30n65c3ic11020-60khzo-247+1 | |
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Contextual Info: Advance Technical Information IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 20A 2.5V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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ixyh20n65c3ic110o-24720n65c3 | |
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Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
Original |
ixxn110n65b4h110-30khzic110ot-227b+4 | |
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Contextual Info: Preliminary Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
Original |
ixyh30n65c3ic11020-60khzo-247+2 | |