IXYH82N120C3 Search Results
IXYH82N120C3 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXYH82N120C3 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 200A 1250W TO247AD | Original | 6 |
IXYH82N120C3 Price and Stock
IXYS Corporation IXYH82N120C3IGBT 1200V 200A TO-247 |
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IXYH82N120C3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IXYH82N120C3
Abstract: DS100335
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Original |
IXYH82N120C3 IC110 O-247 062in. 82N120C3 IXYH82N120C3 DS100335 | |
82N120C3Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH82N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IC110 IXYH82N120C3 O-247 82N120C3 | |
Contextual Info: Preliminary Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXYH82N120C3 IC110 O-247 062in. 82N120C3 | |
IXYH82N120C3Contextual Info: IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM |
Original |
IXYH82N120C3 IC110 O-247 82N120C3 2-13-12-A IXYH82N120C3 |