IXYH100N65C3 Search Results
IXYH100N65C3 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXYH100N65C3 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 200A 830W TO247 | Original | 6 |
IXYH100N65C3 Price and Stock
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IXYS Corporation IXYH100N65C3IGBT PT 650V 200A TO-247 |
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IXYH100N65C3 | Tube | 463 | 1 |
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IXYH100N65C3 | 282 | 6 |
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IXYH100N65C3 | Tube | 300 |
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IXYH100N65C3 | 282 | 1 |
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Littelfuse Inc IXYH100N65C3 (XPT GENX3 SERIES)Transistor, Igbt, 650V, 200A, To-247; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:830W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Littelfuse IXYH100N65C3 |
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IXYH100N65C3 (XPT GENX3 SERIES) | Bulk | 16 | 1 |
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IXYH100N65C3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH100N65C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 100A 2.30V 50ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M |
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IXYH100N65C3 IC110 20-60kHz O-247 100N65C3 |