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    IXYH50N120C3 Search Results

    IXYH50N120C3 Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXYH50N120C3
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 100A 750W TO247AD Original PDF 6
    IXYH50N120C3D1
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 625W TO247 Original PDF 7
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    IXYH50N120C3 Price and Stock

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    IXYS Corporation IXYH50N120C3D1

    IGBT 1200V 90A TO-247
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    DigiKey IXYH50N120C3D1 Tube 321 1
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    Mouser Electronics IXYH50N120C3D1 289
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    Verical IXYH50N120C3D1 41 5
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    TTI IXYH50N120C3D1 Tube 300
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    Quest Components IXYH50N120C3D1 4
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    TME IXYH50N120C3D1 41 1
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    IXYS Corporation IXYH50N120C3

    IGBT 1200V 100A TO-247
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    DigiKey IXYH50N120C3 Tube 296 1
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    Mouser Electronics IXYH50N120C3 570
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    Future Electronics IXYH50N120C3 Tube 32 Weeks 300
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    TTI IXYH50N120C3 Tube 300
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    TME IXYH50N120C3 1
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    Littelfuse Inc IXYH50N120C3D1

    Trans IGBT Chip N-CH 1200V 90A 625W 3-Pin(3+Tab) TO-247AD
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    Arrow Electronics IXYH50N120C3D1 180 41 Weeks 180
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    Newark IXYH50N120C3D1 Bulk 279 1
    • 1 $15.38
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    RS IXYH50N120C3D1 Bulk 8 Weeks 30
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    Littelfuse Inc IXYH50N120C3

    Disc IGBT XPT-GenX3 TO-247AD
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    RS IXYH50N120C3 Bulk 8 Weeks 30
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    Onlinecomponents.com IXYH50N120C3
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    IXYS Integrated Circuits Division IXYH50N120C3D1

    IGBT 1200V 90A 625W TO247 / IGBT 1200 V 90 A 625 W Through Hole TO-247 (IXTH)
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    Win Source Electronics IXYH50N120C3D1 1,050
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    IXYH50N120C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXYH50N120C3

    Contextual Info: Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3 IC110 O-247 062in. 50N120C3 IXYH50N120C3 PDF

    Contextual Info: IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3D1 IC100 O-247 IF110 PDF

    Contextual Info: IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.5V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM


    Original     		IXYH50N120C3 IC110 O-247 062in. 50N120C3 PDF

    Contextual Info: Preliminary Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3 IC110 O-247 062in. 50N120C3 PDF

    Contextual Info: IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.5V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM


    Original     		IXYH50N120C3 IC110 O-247 50N120C3 PDF

    Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) IXYH50N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC100 IXYH50N120C3D1 O-247 IF110 PDF

    Contextual Info: IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3D1 IC100 O-247 IF110 062in. PDF

    Contextual Info: 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH50N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.5V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM


    Original     		IC110 IXYH50N120C3 O-247 50N120C3 PDF

    IXYH50N120C3D1

    Contextual Info: Advance Technical Information IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXYH50N120C3D1 IC110 O-247 IF110 062in. IXYH50N120C3D1 PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF