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    IXXK110N65B4H1 Search Results

    IXXK110N65B4H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXXK110N65B4H1
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 240A 880W TO264 Original PDF 7
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    IXXK110N65B4H1 Price and Stock

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    IXYS Corporation IXXK110N65B4H1

    IGBT PT 650V 240A TO-264
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    DigiKey IXXK110N65B4H1 Tube 1
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    Mouser Electronics IXXK110N65B4H1 438
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    Verical IXXK110N65B4H1 39 3
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    Littelfuse Inc IXXK110N65B4H1

    Igbt, Single, 650V, 250A, To-264; Continuous Collector Current:250A; Collector Emitter Saturation Voltage:1.72V; Power Dissipation:880W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Littelfuse IXXK110N65B4H1
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    Newark IXXK110N65B4H1 Bulk 1
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    IXXK110N65B4H1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXXK110N65B4H1 IXXX110N65B4H1 IC110 10-30kHz O-264 IF110 110N65B4H1 02-04-13-B PDF

    E8 55A DIODE

    Contextual Info: Advance Technical Information IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		10-30kHz IXXK110N65B4H1 IXXX110N65B4H1 IC110 O-264 IF110 110N65B4H1 E8 55A DIODE PDF