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    IXGT30N60B Search Results

    IXGT30N60B Datasheets (6)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGT30N60B
    IXYS 600V HiPerFAST IGBT Original PDF 53.3KB 2
    IXGT30N60B2
    IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF 588.18KB 5
    IXGT30N60B2D1
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 190W TO268 Original PDF 6
    IXGT30N60BD1
    IXYS 600V HiPerFAST IGBT with diode Original PDF 114.75KB 5
    IXGT30N60BU1
    IXYS 600V HiPerFAST IGBT with diode Original PDF 151.86KB 5
    IXGT-30N60BU1
    IXYS HiPerFAST IGBT with Diode Original PDF 151.88KB 5

    IXGT30N60B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXGH30N60B

    Abstract: IXGT30N60B
    Contextual Info: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


    Original
    ixgh30n60bixgt30n60bic110o-247+1o-268 PDF

    14055B

    Contextual Info: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous


    OCR Scan
    ixgh30n60bixgt30n60bo-268-247a+114055b PDF

    L-1047

    Contextual Info: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous


    OCR Scan
    ixgh30n60bixgt30n60b13/10nm/lbo-247+2o-268l-1047 PDF

    Contextual Info: HiPerFAST IGBT IXGH30N60B IXGT30N60B vCES ^C25 vCE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data ÒB Symbol Test Conditions VCES Tj =25°Cto150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 Mft 600 V vGES vGEM Continuous ±20 V Transient ±30


    OCR Scan
    ixgh30n60bixgt30n60bcto150o-247+1o-268 PDF

    Contextual Info: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


    Original
    ixgh30n60bixgt30n60bic110o-247+3o-268ixbh30n60bu1o-268aa PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original
    plus24720n3028n3030n30+1540n3031n6038n6041n6060n60o-264200n60n60c50n607n60bic igbt 25n120ic60080n6060n60 igbt25n120 PDF

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Contextual Info: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan
    o-263plus247tmo-247ixgh28n60b+16ixgh31n60o-268aao-204lsoplus247tmot-227bixga20n120ixgr50n60ixgn60n60ixgx120n60bisoplus247tmixgr40n60ixgh60n60ixgh32n170ixgh35n120ixga20n60bixgp12n60c PDF