62N1 Search Results

Contextual Info: IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

62N15P

Contextual Info: Advanced Technical Information IXTQ 62N15P IXTA 62N15P IXTP 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

36150A

Abstract: E153432 62N15 ISOPLUS247 62N15P 734B2
Contextual Info: Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS on (Electrically Isolated Tab) = 150 V = 36 A ≤ 45 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

Contextual Info: Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS on (Electrically Isolated Tab) = 150 V = 36 A ≤ 45 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ

62N15P

Abstract: 62n1 62N15 IXTP62N15P
Contextual Info: IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

IM6100

Abstract: 6007g DX10 IM6102 R-Car 16-DX
Contextual Info: DMMHL IM 6 1 0 2 Memory Extension/ DMA C o n tro ller/ Interval Tim er MEDIC FEATURES G E N E R A L D E S C R IP T IO N • Provides Extended Mem ory Address to 32K Words The IM 6102 is a multi-function peripheral controller chip incorporating functions such as memory exten­

IM6102-IDL

Abstract: IM6100 IM6102 "memory address controller"
Contextual Info: DMMHL IM 6 1 0 2 Memory Extension/ DMA C o n tro ller/ Interval Tim er MEDIC FEATURES G E N E R A L D E S C R IP T IO N • Provides Extended Mem ory Address to 32K Words The IM 6102 is a multi-function peripheral controller chip incorporating functions such as memory exten­

TDA 6275

Abstract: cpu MT 6225 tda 6205 6.2N2 MT 6225 TDA 6130 HM-6102 62458 MT 6235 design sequential circuit of clocked RS flip flop
Contextual Info: HD-6102 HARRIS M E M O R Y E X T E N S IO N /D M A / INTERVAL TIMER/CONTROLLER MEDIC Â l f i '3 / Ï C g information SISL/V S E M IC O N D U C T O R PRODUCTS DIVISION A DIVISION OF HARRIS CORPORATION Pinout Features H M -6 10G C O M P A T I B L E L O W P O W E R - T Y P . < 5 .0 p W S T A N D B Y

dwa 108 a

Abstract: 62458 621-4G dwa 108 IM6100 IM6102 IM6102-1IDL IM6102-1IPL IM6102-AIPL IM6102-IPL
Contextual Info: D M im IM6102 Memory Extension/ DMA Controller/ Interval Timer MEDIC FEATURES GENERAL DESCRIPTION • Provides Extended Memory Address to 32K Words The IM6102 is a multi-function peripheral controller chip incorporating functions such as memory exten­ sion, direct memory access control, and a programmabje real time clock.

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205