2SB947 Search Results

2SB947

Abstract: 2SB947A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB947 2SB947A DESCRIPTION •With TO-220Fa package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

2SB947

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB947 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.6V(Max)@IC= -7A ·High Speed Switching APPLICATIONS ·Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

Contextual Info: Power T ransistors 2SB947, 2SB947A 2SB947, 2SB947A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Unit : mitt 4.4max. • Features 2.9max. • Low collector-emitter saturation voltage VcEisati • High speed switching • “Full Pack” package for simplified mounting on a heat sink with one

2SB0947

Abstract: 2SB0947A 2SB947 2SB947A
Contextual Info: Power Transistors 2SB0947 2SB947 , 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm Parameter Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −40 V 2SB0947 −50 2SB0947A Collector-emitter voltage 2SB0947

2SB0947

Abstract: 2SB0947A 2SB947 2SB947A
Contextual Info: Power Transistors 2SB0947, 2SB0947A 2SB947, 2SB947A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features Parameter (TC=25˚C) Symbol Collector to 2SB0947 base voltage 2SB0947A Collector to 2SB0947 Ratings V –50 –20 VCEO emitter voltage 2SB0947A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 10.0±0.2 Rating Unit VCBO −40 V −50 2SB0947A Collector-emitter voltage 2SB0947

2SB947

Abstract: 2SB947A
Contextual Info: Inchange Semiconductor Product Specification 2SB947 2SB947A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications PINNING PIN

2SB947

Abstract: 2SB947A
Contextual Info: Power T ransistors 2SB947, 2SB947A 2SB 947, 2S B 947A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Low Voltage Switching • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEcsao • H igh s p e e d sw itch in g • “F ull P a c k ” p ack ag e fo r sim plified m o u n tin g on a h e a t sink w ith one

Contextual Info: Power Transistors 2SB0947 2SB947 , 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −40 V 2SB0947

2SB947

Abstract: 2SB947A
Contextual Info: Power Transistors 2SB947, 2SB947A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB947 base voltage 2SB947A Collector to 2SB947 Ratings –40 VCBO –50 –20 VCEO emitter voltage 2SB947A

2SB947

Abstract: 2SB947A Jmnic
Contextual Info: JMnic Product Specification 2SB947 2SB947A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter

2SB0947

Abstract: 2SB0947A 2SB947 2SB947A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Rating Unit VCBO

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

DARLINGTON TRANSISTOR ARRAYS pu1501

Abstract: 2SD1273 PU3146 PU4128 apu4148
Contextual Info: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name Equivalent Circuit Packaqe (No.) Equivalent Circuit Structure Application General Exam ple(N PN ) PU3000 Series PUA3000 Series PU4000 Series 8 Pin •SIL Packaqe (D72) (D73)

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SB962

Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125