BC213K
Abstract: LOW-POWER SILICON PNP 2SA102 250m40 BC388
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 2SA495 BC388 BFW31 TMPT4125 YTS4125 A5T4125 FMMT4125 MMBT4125 MMBT4125 MMBT4125 4 2N4125 2SA594 2SA594 2SA594 2SA732 TEC8012D TEC8012D 2SA1182 BC213K >= Manufacturer See Index See Index
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2sa495bc388bfw31tmpt4125+8yts4125a5t4125fmmt4125mmbt4125bc213klow-power silicon pnp2sa102250m40
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2SA554
Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A
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sa1192sa429gtm2sa4732sa503+152sa5042sa510-1sa625o-92jf2sa638st0-92jb2sa5542sa5842sa5532sa5642sa5252sa5522sa639s2sc519a2sc520a
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1
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2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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SC522-M
Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
Contextual Info: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P MS0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M
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ms0801-604032sa499-mmsoeoi-60403ms0902+12sa503sa510-msa512-msc522-m604072sc520asc5222sc512m2sc519am50801sa5122sc520a-m
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TO-92B
Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55
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2sc9382sc9592sc10q82sc1175+72sc12092sc13172sc13182sc13462sc13472sc1672to-92b
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2SC 8050
Abstract: 2SC 8550 2sd 8050 8050 8550 2sd327 2SC185 2SCI175 2sa723 2SA598
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA RITY CASE VcEO Pd Ic mW (A) VCER* (V) H FE ^CE(sat) min max Ic VfE max Ic (mA) (V) (V) (A) fi C0h r n in max (MHz) (MHz) COMPLE MENTARY TYPE 2SA659 2SA683 2SA708 2SA719 P P P P TO-92B
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2sa6592sa6832sa7082sa719+142sa7202sa7232sa7332sa8172sa8902sa8912sc 80502sc 85502sd 80508050 85502sd3272sc1852sci1752sa598
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TO-237a
Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N
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2sc10082sc1175o-92b2sa659+112sc12092sc13172sa7192sc1318to-237a92pu51a2sa59892pu45to-92b2sc134692pu01a
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2SA594
Abstract: 2SC594
Contextual Info: TOSHIBA 7h -CDIS CR ETE /OP TO} 9097250 T O S H IB A D E ’J S O T T E S O □□□7227 T ' 3 C D IS C R E T E /O P T O 1 S IL IC O N PNP E P IT A X IA L TYP E PCT PROCESS) Unit in mm <¿>aa9MAX. HIGH FREQUENCY AMPLIFIER APPLICATIONS 0 S 4 5 MAX. VIDEO AMPLIFIER APPLICATIONS.
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200mhz-100ma-10ma2sc594+4oc-300-30-50-1cch11ii2sa594
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2SC594
Abstract: 2SA594 OOD7427 N-325 70M40 2SA59
Contextual Info: TOSHIBA O I S CRETE/OPTO} 9097250 TO SHIBA DE J t O T T E S Q OOD7427 E ~SÍ <D I S C R E T E / O P T O 5òC 07^27 0 /13/-2-3 SILICON NPN EPITA XIA L TYPE PCT PROCESS) Unit- in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. j2fe.S9M AX. VIDEO AMPLIFIER APPLICATIONS.
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ood7427200mhz100ma2sa594+42sc594n-32570m402sa59
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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2SA594
Abstract: c0b35pf 2SC594 70M40
Contextual Info: TOSHIBA í D I S C R E T E / O P T O } 909725 0 T OS HI BA ~SÍ DISCRETE/ OPT O 00G7427 Ql h 21 5òC 0 'f-3/-'Î-3 SILICON NPN EPITAXIA L TYPE (PCT PROCESS) Unit- in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. 0 9 ,3 9 MAX. VIDEO AMPLIFIER APPLICATIONS. 0 8 .4 5 MAX
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00g7427200mhz100ma2sa594+4lllllllllllllllll1l11lllllllllllllllll1llc0b35pf2sc59470m40
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2SA594
Abstract: FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178
Contextual Info: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA 594 PROCESSJj ii ft X * ffl INDUSTRIAL APPLICATIONS o o High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications Unit in mm : 3 u- ?»S ft i >1 %W 5 94 ¿3X7"! fT = 2,00MHz ( T y p .)
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2sa594200mhz2sc594ft1d+2produced by perfect crystal device technologycc178
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152
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2sc1175
Abstract: 92PU45 2SB564 2SC1008 2SD471 2sc100b 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. PO LA R ITY T-27-01 CASE M A X IM U M RATING S Pd ImW 'c A) 300 250 700 800 0.3 0.2 0.7 0.7 H V CEO (V) V CE(SAT) FE 'c Im A) V CE (V) 560# 232#
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t-27-012sc934o-92b2sc938+112sc9592sc10082sc11752sa65992pu452sb5642sd4712sc100b2sc134692pu01a2sa719
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1/sc-70ytf6122sk2381+15ytf8412sk2387ytf4422sk2149ytf613toshiba mg150n2ys40mg75n2ys40mg15n6es42mg150n2ys402sk150atoshiba s2530a2sk270amg8n6es42mg15g1al2mg75j2ys40
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bc352
Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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mps5142mps51432n9982n3677+142n24112n1991pn51432n51432n28022n2803bc352km90bc370k90152n33412n5242oc2012u 64 diode
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2SC200I
Abstract: D471 2SA593 2sc1175 2SC1346 92PU01A 92PU45 2SA659 2SA719 2SA730
Contextual Info: Medium Power Amplifiers and Switches TYPE ' FOLA 1 NO. RJTY CASE MAXIMUM RATINGS W IC VCEO mW (A) (V) HFE aùm VCB<m «) IM I 1C (*A) VCR (V) (V) (A) fT min (MHz) tM X Cok COMPLE 1 m x MENTARV TV PIS <PF) 2 SCI 004 2 SCI 175 2SC1209 2SC1317 •2SC1318 M
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2sc11752sa6592sc1209o-92b+102sa7192sc131825a7202sc13462sc200id4712sa59392pu01a92pu452sa730
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2sc1175
Abstract: 2sc100b 2SC959N 2SC1346 2SC938 2SC959 2SD471 92PU01A 92PU02 92PU45
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M RATING S H P O L A R IT Y TYPE CASE 2SC934 2SC938 2SC959 2SC1008 N N N N TO-92B TO-92B TO-39 TO-39 300 250 700 800 0.3 0.2 0.7 0.7 15 60 80 60 40 50 40 80 560# 232# 200# 240# 20 50 200 50 5 1 5 2 0.5 2 0.7
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2sc934o-92b2sc9382sc959+112sc10082sc11752sa6592sc12092sc100b2sc959n2sc13462sd47192pu01a92pu0292pu45
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