2SD1833 Search Results

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2SB1290

Contextual Info: Transistors 2SB1290 2SD1833 96-630-B55 (96-741-D55) 285

Contextual Info: 7020^ MQE D ROHM CO LTD 00Qb004 3 DRHtl 2SD1833 h 7 > y ' X $ / T ransistors - T - 3 3 - C ^ i' 2 S Û N PN -> '} 3 > h =7 > y x 9 1 8 3 3 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • ii- '^ t> ill/'D im e n s io n s Unit : mm

2SD1833

Abstract: 251C 2SB1290
Contextual Info: 2SB1290 2SD1833 Transistors I Power Transistor —80V, —7A 2SB1290 •F e a tu res 1) 2) 3) 4) 5) •A b s o lu te maximum ratings <Ta=25t:) Low VoE(sai). ( T y p —0.3V at lc / le = ~ 4 / —0.4A) Excellent DC current gain characteristics. Pc=30W (Tc=25’C)

2SB1290

Abstract: 2SD1833 TRANSISTOR 2SD1833
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833

2sd1833

Contextual Info: 2SD1833 /Transistors NPN '> • ;= ! > 2SD 1833 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • ^l-ftjTliilSI/Dim ensions U n it: mm 1) V C E ( s a ii= 0 - 3 V (T y p .)fc f£ i'0 (at lc / I b —4A/0.4A) 2) hFE < D » fc $ $ 'ttA ''d ftT ^-5 o

2SD1833

Abstract: transistor code 0b t 317 transistor
Contextual Info: 2SD1833 Transistor, NPN Features Dimensions Units : mm • available in T0-220FP (SC-67) package • low collector saturation voltage, typically VCE(sat) = 0.3 V at Iq/I b = 4 A/0.4 A • excellent current characteristics of dc current gain (hFE) • large collector power dissipation:

2SD1833

Contextual Info: I ' 7 > y ^ i î /Transistors 2SD1833 y 'j3 > h 7 > y X $ Triple Diffused Planar NPN Silicon Transistor 1&J§}j£H:fr*âllllff l/L o w Freq. Power Amp. 2SD1833 • ^ f } f i\ f ; 4 0 / D i m e n s i o n s U n it : mm • « * 1) VcE(sat) ^>''(6^'o VcE(sat]=0.3V(Typ.)

Contextual Info: 2SB1290 2SD1833 Transistors I Power Transistor —80V, —7A 2SB1290 #Features 1) 2) 3) 4) 5) ) Absolute maximum ratings (Ta—25C ) Low Vce(sat). (Typ.—0.3V at Ic /I b = — 4 /—Q.4A) Excellent DC current gain characteristics. Pc=30W (Tc=s25°C) W ide SO A (safe operating area).

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

Contextual Info: h ~7 > V 7 , £ /T ra n s is to rs 2SB1290 2 SB 1290 Epitaxial Planar PNP Silicon Transistor fiJ iilS ll^ J iS 'U ffl/L o w Freq. Power Amp. jíE l/D im e n s io n s Unit: mm 1) VcE(sat) VcE (sal)=—0.3V (Typ.) 70 +S? (Ic / I b = - 4 A / - 0 . 4 A ) ^3.1±0. I

PCR406

Abstract: PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent
Contextual Info: 芯片型号 典型成品型 号 极 性 HFE MIN HFE MAX HFE IC mA HFE VCE(V) VCESAT(V) MAX VCESAT(V) IC(mA) VCESAT(V) IB(mA) 背面金 属 典型封装形 式 2007NA 2N3904 N 0.2 0.625 65 43 6 80 300 10 1 0.2 10 1 金 TO-92 2007PA 2N3906 P 0.2 0.625 45 43

2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754

Contextual Info: ROHM CO LTD HOE . /Transistors 12S0 TÛ SÔ W D DOQSbQQ 3 QRHÎ1 2SB1290 — - 7 = 3 3 -/9 X tr $ * y 7 I/ 7° U —t M PNP y U 3 > K ÿ > y 7. $ i&fël}j£WjjtmltlI ffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor •

2SD1812

Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
Contextual Info: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]

1271A

Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513

NEC 1357

Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
Contextual Info: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *