2SD1749 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚

2sb1749

Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A VCEO Emitter-base voltage Collector open 60 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 3.0±0.2 2.0±0.2 2SD1749 2SD1749A Collector-emitter voltage 2SD1749 (Base open) 2SD1749A Emitter-base voltage (Collector open)

2SD1749

Abstract: 2SD1749A 2SB1179 2SB1179A
Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4 1 80 60 0.75±0.1 0.4±0.1 1.0±0.2 Parameter

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A 7.0±0.3 • Absolute Maximum Ratings +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE

Darlington pair IC high current

Abstract: panasonic 2SD 2sd darlington
Contextual Info: 2SD1749, 2SD1749A Power Transistors 2SD1749, 2SD1749A Package Dim ensions U n it ' m m Silicon NPN Triple-Diffused Planar Darlington Type A F Power Amplifier Com plem entary Pair with 2SB1179, 2SB1179A • Features • High DC cu rre n t gain Ii f e • High speed sw itching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚

2SD1749

Abstract: 2SB1179 2SB1179A 2SD1749A
Contextual Info: 2SD1749, 2SD1749A Power Transistors 2SD 1749, 2SD 1749A P a c k a g e D im e n s io n s Unit 1 mm Silicon NPN Triple-Diffused Planar Darlington Type A F P o w e r A m p lifier C o m p le m e n ta ry P air with 2 S B 1 1 7 9 , 2 S B 1 1 7 9 A • F e a tu re s

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A 7.0±0.3 • Absolute Maximum Ratings +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High forward current transfer ratio hFE Lead-free which has satisfactory linearity. z High speed switching. z Complementary to 2SD1749. 2SA1179 APPLICATIONS z For power application and switching.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

2sd1878

Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes