2SB1179A Search Results

2sb117

Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power T ransistors 2SB1179, 2SB1179A 2SB1179, 2SB1179A Package Dim ensions Unit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3max. Pow er Amplifier, Switching C om plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A • Features 0.9 ± 0 .1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 Parameter Collector-base voltage (Emitter open) 2SB1179 Symbol Rating Unit VCBO

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A 7.0±0.3 • Absolute Maximum Ratings +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE

Darlington pair IC high current

Abstract: panasonic 2SD 2sd darlington
Contextual Info: 2SD1749, 2SD1749A Power Transistors 2SD1749, 2SD1749A Package Dim ensions U n it ' m m Silicon NPN Triple-Diffused Planar Darlington Type A F Power Amplifier Com plem entary Pair with 2SB1179, 2SB1179A • Features • High DC cu rre n t gain Ii f e • High speed sw itching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 Parameter Collector-base voltage (Emitter open) 2SB1179 Symbol Rating Unit VCBO

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington Unit: mm 3.0±0.2 2.0±0.2 2SB1179 Collector-base voltage (Emitter open) 2SB1179A Collector-emitter voltage 2SB1179

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 Parameter Collector-base voltage Emitter open 2SB1179 Symbol Rating Unit VCBO −60 V −60 0.75±0.1 0.4±0.1 1 2 3 V Collector-emitter voltage 2SB1179

panasonic 2SB

Contextual Info: Power T ransistors 2SB 1179, 2S B 1179A 2SB1179, 2SB1179A Package Dim ensions U n it I mm Silicon PNP Epitaxial Planar Darlington Type 3.7m ax. 7.3max. Pow er Am plifier, Switching C o m plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A 0 .9 ± 0 .1 -

2SB1179

Abstract: 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A 7.0±0.3 • Absolute Maximum Ratings +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚

2sb1749

Contextual Info: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A VCEO Emitter-base voltage Collector open 60 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4

UJ23

Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power T ransistors 2SB1179, 2SBÌ179V Package üvmensïons U n it ! m Silicon P N P Epitaxial P lan ar Darlington Type 7. 3 m a x . Power A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A , 3. 7m a x. 3.2max.

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.