2SB1011 Search Results

2SB1011

Contextual Info: Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −400 V Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SB1011 Silicon PNP triple diffusion planar type Unit: mm For low-frequency amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector to base voltage VCBO • High collector to emitter VCEO • Large collector power dissipation PC

2SB1011

Abstract: 2sB101
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 • Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Pow er T ransistors 2SB1011 2SB1011 Silicon PNP Triple-Diffused Planar Type Package Dim ensions À F Amplifier • Features • • • • High collector-base voltage V cbo High collector-emitter voltage ( V ceo) Large collector power dissipation (Pc) Low collector-eimitter saturation voltage (VcEisao)

NEC 1357

Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
Contextual Info: 29 - a « a « Manuf. Type No. ;¥ Z SANYO U 2 TOSHIBA B S NEC ÌL HITACHI m ± FUJITSU ì1 tfl T MATSUSHITA a £ 2SA953 2SA1309A 2S A 1352 Z 2SA1142 2SA914 2 SA Z 2 S A 1 3 51 / 1 353 > h m. MITSUBISHI □ — ROHM A 2SA937 2SB1011 # 2SA1156 2SB1011 2SB942A

2SB1011

Contextual Info: Power Transistors 2SB1011 2SB1011 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions AF Amplifier • Features • High collector-base voltage V c bo • High collector-em itter voltage ( V c eo ) • Large collector pow er dissipation (Pc) • Low collector-eim itter saturation voltage (VcEisa»)

2SB1011

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 • Features 1.9±0.1

2SB1011

Contextual Info: Power Transistors 2SB1011 Silicon PNP triple diffusion planar type Unit: mm For low-frequency amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector to base voltage VCBO • High collector to emitter VCEO • Large collector power dissipation PC

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D52 * , D53) U Type (D41) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SB1545

Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
Contextual Info: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970

2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
Contextual Info: 32 - tt 2 SA 1465 0 a 2SA 1466 B 2SA 1467 i ED M £ T y p e No. m 146 8 € Manuf. H » S ANYO 2SB698 2SA 2 SA 2SA 1471 1 474 1 47 5 1 47 6 = •;# ^ ^ = n ^ = # ft 2SA 1477 = 3 2SA 1478 = ;¥ H. ft 2SA 1479 2SA 1480 - ✓ J 2SA 1481 2SA 1482 2SA 1485 2 SA 1487

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *