170N10 Search Results

Contextual Info: IXFH 170N10P IXFK 170N10P PolarHTTM HiPerFET Power MOSFET VDSS ID25 = = = RDS on 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 170N10P IXFK 170N10P VDSS = 100 V ID25 = 170 A Ω RDS on ≤ 9.0 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

Contextual Info: HiPerFETTM Power MOSFET 170N10 170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C

IXFN170N10

Abstract: 170N10 125OC IXFK170N10
Contextual Info: HiPerFETTM Power MOSFET 170N10 170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFET 170N10 170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C

D2562

Abstract: EE-SS3
Contextual Info: HiPerFET Power MOSFET 170N10 170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C

170N10P

Contextual Info: IXTK 170N10P IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 100 170 9.0 TO-264 (IXTK) Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100

170n10

Abstract: vestas 185H10 197-IX
Contextual Info: ADVANCE INFORMATION v DSS H iP e rF E T Pow er M O SFET 100V 100V 100V IXFK 170N10 100V Single MOSFET Die D ^D 25 185A 170A 185A 170A 1* D S o n 8m£2 10mi2 8mn 10mß 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol v DSS Test Conditions T j = 25°C to 150°C

Contextual Info: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a 170N10 170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C

170N10P

Contextual Info: IXTQ 170N10P IXTT 170N10P IXTK 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: n ix Y S HiPerFET Power MOSFET IXFN 170N10 170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN

BHRH

Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125
Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET VDSS 170N10 170N10 10mΩ 10mΩ trr 200ns 200ns TO-264 AA IXFK Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C 100 100 100 100 V V V GS V GSM

Contextual Info: Advanced Technical Information IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

131-G W J 60

Abstract: 131-G W J 59 170N10
Contextual Info: HiPerFET Power MOSFET IXFN 170N 10 IX F K 170N 10 Test Conditions V DSS T, T, Ï V oo„ Vcs V GSM I ^DM “ = Maximum Ratings IXFN IXFK 25°C to 150°C 25 °C to 1 5 0 ”C Continuous Transient T_ T„ T„ Tc = = = = 25°C 125"C 25°C 253C E* Tc = 25°C

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

170L1013

Abstract: 170N20 170N1008 170L2218 170N1111 170N2108 170L2117 170N1006 170N1107 170N2113
Contextual Info: Ferrule-FWP High Speed FWP Fuse 690V-700V IEC/UL Ferrule High Speed Fuses With Striker Provide Visual and Remote Fuse Status Indication RoHS Compliant Very High Breaking Capacity Excellent Cycling Capability & DC Performance Low Arc Voltage & Low Let-Through Energy

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70