Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    170N10P Search Results

    SF Impression Pixel

    170N10P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTQ170N10P

    Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTQ170N10P 290 1
    • 1 $13.72
    • 10 $9.82
    • 100 $8.20
    • 1000 $7.82
    • 10000 $7.82
    		Buy Now
    Mouser Electronics IXTQ170N10P 776
    • 1 $15.03
    • 10 $8.46
    • 100 $8.46
    • 1000 $8.32
    • 10000 $8.32
    		Buy Now
    TTI IXTQ170N10P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.73
    • 10000 $7.73
    		Buy Now

    IXYS Corporation IXTK170N10P

    Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTK170N10P 1
    • 1 $11.01
    • 10 $9.59
    • 100 $8.89
    • 1000 $8.89
    • 10000 $8.89
    		Get Quote
    Mouser Electronics IXTK170N10P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.64
    • 10000 $9.64
    		Get Quote
    TTI IXTK170N10P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.58
    • 10000 $9.58
    		Buy Now

    IXYS Corporation IXFK170N10P

    Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFK170N10P 1
    • 1 $13.88
    • 10 $11.05
    • 100 $9.93
    • 1000 $9.93
    • 10000 $9.93
    		Get Quote
    Mouser Electronics IXFK170N10P 1,039
    • 1 $19.04
    • 10 $14.50
    • 100 $12.08
    • 1000 $10.76
    • 10000 $10.76
    		Buy Now
    TTI IXFK170N10P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.80
    • 10000 $8.80
    		Buy Now

    IXYS Corporation IXTT170N10P

    Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTT170N10P 1
    • 1 $12.58
    • 10 $10.64
    • 100 $8.85
    • 1000 $8.85
    • 10000 $8.85
    		Get Quote
    Mouser Electronics IXTT170N10P
    • 1 $16.40
    • 10 $9.32
    • 100 $9.32
    • 1000 $9.31
    • 10000 $9.31
    		Get Quote
    Newark IXTT170N10P Bulk 1
    • 1 $16.25
    • 10 $10.07
    • 100 $9.50
    • 1000 $9.12
    • 10000 $9.12
    		Buy Now

    IXYS Corporation IXTT170N10P-TR

    Transistor: N-MOSFET; 100V; 170A; 715W; D3PAK,TO268; 120ns
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXTT170N10P-TR 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.61
    • 10000 $7.61
    		Get Quote
    Mouser Electronics IXTT170N10P-TR
    • 1 $17.37
    • 10 $13.23
    • 100 $9.89
    • 1000 $9.19
    • 10000 $9.19
    		Get Quote
    Find more 170N10P price and stock on Findchips.com

    170N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXFH 170N10P IXFK 170N10P PolarHTTM HiPerFET Power MOSFET VDSS ID25 = = = RDS on 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170n10po-247405b2 PDF

    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 170N10P IXFK 170N10P VDSS = 100 V ID25 = 170 A Ω RDS on ≤ 9.0 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		170n10p PDF

    170N10P

    Contextual Info: IXTK 170N10P IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 100 170 9.0 TO-264 (IXTK) Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


    Original     		170n10po-264 PDF

    170N10P

    Contextual Info: IXTQ 170N10P IXTT 170N10P IXTK 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170n10po-268405b2 PDF

    Contextual Info: Advanced Technical Information IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170n10po-268065b1728b1+1123b1 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF