TRANSISTOR 2SC5060 Search Results

2SC5060

Abstract: 2SC5060 equivalent
Contextual Info: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”

2SC5060

Abstract: 2SC5060 equivalent transistor 2sc5060 2sg50
Contextual Info: 2SC5060 Transistor, NPN, Darlington Features Dimensions Units : mm • • • • • • available in ATV TV 2 package built-in 90 ±10 V Zener diode between collector and base low Zener voltage fluctuation highly resistant to surge damper diode incorporated

2SC5060

Abstract: 9010V
Contextual Info: Power transistor 9010V, 3A 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain.

2SC5060

Abstract: 2SC5060 equivalent ic 9010
Contextual Info: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 !External dimensions (Units : mm) 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”

Contextual Info: 2SC5060M Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2SC5060N Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2SC5060 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.5.0k

2SC5060

Contextual Info: 2SC5060 /Transistors 2SC50601 7Jl'7‘L/ ~ f^N P N n'syztw-'J> ^ > # # Epitaxial Planar NPN Silicon Transistor Darlington) J i)j£ li:ftiti,l1!ffl/L o w Freq. Power Amp. • • 1) v f iiE l/D im e n s io n s (U n it : m m ) 90±10V » 7 K £ f*3SE„

Contextual Info: 2SD2396 2SC5060 Transistors Low Frequency Transistor 60V, 3A 2SD2396 •F e a tu re s 1) 2) 3) 4 ) •A b s o lu te maximum ratings (T a = 2 5 tî) Low VcE(sai). (Typ. 0.3V at Ic/I b = 2 /0 .0 5 A ) High DC current gain. (Typ. 1000 at V ce/I c= 4 V /0 .5 A )

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

transistor D351

Abstract: D416 transistor
Contextual Info: 2SD2396 2SC5060 Transistors I Low Frequency Transistor 60V, 3A 2SD2396 •F e a tu re s •A b so lu te maximum ratings (T a= *25t ) 1 ) L o w V cstwt>. CTyp. 0 .3 V a t Ic/ I b “ = 2 /0.0 5A ) 2) H ig h D C c u rre n t g a in . (T y p . 1 0 0 0 a t V ce/I c = = 4 V /0 .5 A )

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP

2SA1576UB

Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Contextual Info: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.

pioneer mosfet audio amp ic

Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great

2SB1242

Abstract: 2SB1326 2SB1485 2sc5083 2SD1660M 2SA1776 2sa192 2SB1240 2SD2315 2SA1548
Contextual Info: Transistors ATR • ATV Approximately the same size as the TO -92 w ith up to 1 W power cap ab ility. Taped type for automated placement or bulk packaging available. Package , Application VcEO V ATV ATR ^VcES %^VcER Part No. - 2SA937AMLN -5 0 40 50 -5 0

2SC2030

Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products To make it easier for the customer to select the type of product best suited to specific applications, we offer transistors in three types : 1 standard, (2 ) semi­ Package FTR 2SA785