2SK230 Search Results

Contextual Info: 2SK2303 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SK2430

Abstract: 2SK2042 2SK2306 2SK2041 2SK2094 2SK2103 2SK2104 2SK2105 2SK2463
Contextual Info: R D N fn POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SK1973

Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
Contextual Info: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K

transistor b1184

Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Contextual Info: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K

2SK2296

Abstract: 2sk2450 K2460 2SK2295 22BW
Contextual Info: POWER M ÜSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2295

Abstract: 2SK2294 2SK2460 2SK2176 2SK2430 2SK2429 2SK2293 2sk2298 2SK2104 transistor 2sk
Contextual Info: POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK230

Abstract: 2SK2463
Contextual Info: •UNITI POWER MGSFET s M 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2295

Abstract: 2SK2460 2SK2459 2SK2299
Contextual Info: POWER MQSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placem ent. 2. MOSFETs operating from 4 volts These M OSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2430

Abstract: F5 SOT-89 2SK2463 2SK2105 2SK243 2SK2041 2SK2042
Contextual Info: POWER MÜSFET M inuit 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IO, saving counts of components buffer transistors