TSMT6 Search Results

Contextual Info: RSQ030P03 Transistor 4V Drive Pch MOS FET RSQ030P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. (PD=1.25w) 3) High speed switching.

Contextual Info: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX

RTQ025P02

Contextual Info: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX

RTQ040P02

Contextual Info: RTQ040P02 Transistors 2.5V Drive Pch MOS FET RTQ040P02 zStructure Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1 Low on-resistance. 60mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (5) 0.85

Contextual Info: RSQ030P03FRA RSQ030P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ030P03FRA RSQ030P03 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark 0.16

RTQ020N03

Contextual Info: RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive).

RSQ020N03

Contextual Info: RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). (5) 0.85 0.7 (4) 1.6 2.8 (6)

Contextual Info: 1.5V Drive Nch MOSFET RUQ050N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

Contextual Info: RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 53mW ID 4A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RRQ045P03 Datasheet Pch -30V -4.5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 35mW ID -4.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RTQ020N05 Datasheet Nch 45V 2A Power MOSFET lOutline VDSS 45V RDS on (Max.) 190mW ID 2A PD 1.25W (6) (5) TSMT6 (4) (1) (2) lFeatures (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RSQ015N06 Datasheet Nch 60V 1.5A Power MOSFET lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

RSQ025P03

Contextual Info: RSQ025P03 Transistor DC-DC Converter -30V, -2.5A RSQ025P03 zExternal dimensions (Units : mm) zFeatures 1) Low On-resistance.(120mΩ at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching. 4) Low voltage drive.(4V) TSMT6 2.8 0.85 2.9 (4) (5) (6)

QS6M4

Contextual Info: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET

Contextual Info: RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

K01 equivalent

Contextual Info: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05

RSQ030P03

Contextual Info: RSQ030P03 Transistor DC-DC Converter −30V, −3A RSQ030P03 zExternal dimensions (Units : mm) zFeatures 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(4.5V) TSMT6 2.8 0.85 2.9 (4) (5) (6) 0.16

Contextual Info: RSQ020N03FRA Nch 30V 2A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 30V RDS on (Max.) 134mW ID 2.0A PD 1.25W (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit lFeatures 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode.

Contextual Info: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V).

RSQ025P03

Contextual Info: RSQ025P03 Transistor 4V Drive Pch MOS FET RSQ025P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(120m: at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching.

RZQ045P01

Contextual Info: RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (5) 0.85 0.7 (4) 1.6 2.8 (6)

RRQ045P03

Contextual Info: 4V Drive Pch MOSFET RRQ045P03 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) High Power Package. 3) High speed switching. (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) 0~0.1 0.3~0.6 (1) (3)

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL ACCEPTS THESE DEVICES 33206 SOT-26, SOT-457 SC-59-6, SC-74-R TSOT-23-6, TSOP-6 B Mini-6-G2 Mini-6-DA RENESAS WSOF 6 PIN ROHM SMD6, SMT6, TSMT6 T.I.