2SD266 Search Results

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Units : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) (1)Base (2)Collector (3)Emitter

2SD2662

Abstract: T100
Contextual Info: 2SD2662 Transistors Low frequency amplifier 2SD2662 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

2SD2662

Contextual Info: SPICE PARAMETER 2SD2662 by ROHM TR Div. * 2SD2662 NPN BJT model * Date: 2006/12/01 .MODEL 2SD2662 NPN + IS=250.00E-15 + BF=376 + VAF=50.700 + IKF=7 + ISE=250.01E-15 + NE=2.0972 + BR=23.805 + VAR=100 + IKR=.73877 + ISC=526.46E-15 + NC=1.4423 + NK=.78694 + RE=40.000E-3

2SD2662

Abstract: T100
Contextual Info: 2SD2662 Transistors Low frequency amplifier 2SD2662 zDimensions Unit : mm zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA (1)Base (2)Collector (3)Emitter ROHM : MPT3 JEITA : SC-62

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

Contextual Info: 2SD2662 Datasheet NPN 1.5A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 1.5A MPT3 Base Collector Emitter 2SD2662 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1698 3) Low VCE(sat) VCE(sat)=0.35V(Max.)

Contextual Info: 2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions Unit : mm Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)Base (2)Collector (3)Emitter ROHM : MPT3 JEITA : SC-62

Contextual Info: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)

Contextual Info: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)

2SD2661

Abstract: T100
Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

Contextual Info: 2SD2662 Transistors Low frequency amplifier 2SD2662 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5

2SD2661

Contextual Info: SPICE PARAMETER 2SD2661 by ROHM TR Div. * 2SD2661 NPN BJT model * Date: 2006/12/01 .MODEL 2SD2661 NPN + IS=260.00E-15 + BF=410.46 + VAF=7.3200 + IKF=1.6469 + ISE=260.00E-15 + NE=2.2185 + BR=126.90 + VAR=100 + IKR=1.5723 + ISC=504.02E-15 + NC=2.1616 + NK=.25256

Contextual Info: 2SB1698 Datasheet PNP -1.5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -1.5A MPT3 Base Collector Emitter 2SB1698 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low VCE(sat) VCE(sat)= -0.37V(Max.)

2SD2663

Contextual Info: Ordering number : ENN7380 2SB1700 / 2SD2663 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1700 / 2SD2663 Driver Applications Applications Package Dimensions unit : mm 2042B • • 4.0 1.0 1.0 High DC current gain. Large current capacity and wide ASO.

power TRANSISTOR-12v dc

Abstract: 2SD2661 T100
Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Units : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) (1)Base (2)Collector (3)Emitter

2SD2662

Abstract: T100
Contextual Info: 2SD2662 Transistors Low frequency amplifier 2SD2662 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

npn pnp transistor bipolar cross reference

Abstract: DSS5240T PBSS4240T PBSS4160 MMJT9435 PBSS4140U 2SC4672 equivalent PBSS4160U PBSS4160V PBSS4220V
Contextual Info: Issue Number | 001 New Product Announcement Competitive second sources to popular Bipolar transistors The Bipolar transistor market has a rich diversity of applications and suppliers. Where in the past there have been industry standard part numbers adopted by numerous

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink