TIP146 EQUIVALENT Search Results

TIP147

Abstract: tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14
Contextual Info: TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142 Equivalent Circuit

TIP147

Abstract: counterfeit tip146 equivalent tip147 data sheet tip147 fairchild TIP145 TIP146 tip147 equivalent
Contextual Info: TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

Contextual Info: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 TO-3P 1 PNP Epitaxial Silicon Darlington Transistor

Contextual Info: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 1 PNP Epitaxial Silicon Darlington Transistor

tip142 equivalent

Abstract: TIP142 tip147 transistor TIP140 TIP141 TIP145 TIP146 TIP147 tip146 equivalent
Contextual Info: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 TO-3P 1 PNP Epitaxial Silicon Darlington Transistor

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required

MJ11017 equivalent

Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types

BU108

Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

BU108

Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:

tip122 tip127 audio amp

Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power

Motorola transistor 388 TO-204AA

Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

mj11015 equivalent

Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor

2N6124

Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp

Motorola transistors MJE3055 TO 127

Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.