T05 TRANSISTOR Search Results

2N1305 TEXAS INSTRUMENTS

Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
Contextual Info: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>

zn1613

Abstract: NKT0028 BFX84 T018
Contextual Info: NPN Silicon Transistors IMPN S ilicon Transistors fo r high level audio applications Type Characteristics; at T.amb =25 C M a xim um ratings Case B F X 84 B F X 85 T05 T05 B F X 86 B F Y 50 B F Y 51 B FY 52 B F Y 53 N K T 0028 N K T 0128 N K T 10339 N K T 10439

Contextual Info: US6T5 Transistors Low frequency amplifier US6T5 2 (6) (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 0.15Max. Abbreviated symbol : T05 !Equivalent circuit !Absolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC

Contextual Info: US6T5 Transistors Low frequency amplifier US6T5 2 (6) (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 0.15Max. Abbreviated symbol : T05 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC

Contextual Info: US6T5 Transistors Low frequency amplifier US6T5 2 (6) (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 0.15Max. Abbreviated symbol : T05 !Equivalent circuit !Absolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC

5C transistor

Abstract: transistor 5c 5C-32 nato 5C-23 5C-24 5C-33 1MAA00237AAP 30CW C32C
Contextual Info: Obtflobs. 5C Series Chassis Mounted T05 .W1^6 v w w w VW VW A range of finned heatsinks with hollow clamp screw to trap the transistor flange against dissipation seating. e = 30°C/W Body finish: Black anodised. Type Clamp Screw 5C 5C-20 Plastic Metal 5C-23

esp 9a

Abstract: S1300 transistor
Contextual Info: Wfipl mLftm HEW LETT PACKARD Optical R eflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features D escription • Focused Emitter and Detector in a Single Package • T05 Package • Binning of Sensors by

2n3055 tos

Abstract: SE9331 fairchild semiconductors general purpose 2n3055 transistors 2N3054 2N3440 2N6233 BFX34 2N3792 fairchild 2n3055
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Code

150 amp transistors

Abstract: 2n3055 tos BFR97 2n3055 sgs SGS-ATES fairchild semiconductors bfr36 BFR98 2N3054 2N6233
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Power Transistors N PN Power Transistors Metal Can T05 REFERENCE T A B LE See small signal general purpose a m plifier and high voltage sections M AX r a | in g s C H A R A C TE R IS TIC S @25‘ C V CE(sat)

2n3055 tos

Abstract: fairchild semiconductors 2N3054 2N3440 2N6233 BFX34 SE9331 35382d Solidev
Contextual Info: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Code V CE O

2n3055 tos

Abstract: 2n3714 fairchild 10 amp npn power transistors 2N3715 FAIRCHILD 2N4915 2N3054 2N3440 2N6233 BFX34 SE9331
Contextual Info: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Pfo T T c—25“C

2N5494

Abstract: T066 2N3740 2N4911 T0-220AB 2N3741 2N4912 2N3719 T0220AB Solidev Semiconductors
Contextual Info: Sem iconductors Solidev Silicon Power Transistors Silicon N P N /P N P Power Transistors— Up to 7 Am p REFER EN CE T A B L E E le c tr ic a l C h a r a c te r is tic s <TC — 25°C Veto V ) lc (A ) hFE at M in . M ax. Code 0 .7 2N 3053 NPN T05 60 40 0.7

2N3350

Abstract: T052 2N3680 2S307 TIS23 transistor t05 2N2060 2N2223 2N2223A 2S306
Contextual Info: Silicon Transistors Type Case No. c ^ o *“ 3= 0 Maxim um Ratings at25°C amb. FEATURES 2 C c <u o “ O P N P C h o p p er SP E C IA L Characteristics ' h FE V CB V CE V EB V V V 'c A Min. P .o, w mA V C E SA T ) fT Max. *C Min. mA M c/s 25306 T05 A -6

MPS3388

Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
Contextual Info: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40

transistor t05

Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
Contextual Info: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

2N3053 equivalent

Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
Contextual Info: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005

NKT 275 transistor

Abstract: 2N6135 MD14 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TRM401

Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BF109

Abstract: 50kSA BFY99 MT75d 35834B MST15 MST60 RT5003 V643 MST30
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

n4300

Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Contextual Info: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.

2SC114

Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

BFY99

Abstract: BF109 2sc700 2sc113 transistor bf109 11C1F1 BC140D MT20 RT5001 RT5003
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

B3597

Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT