PN2218
Abstract: PN2219A
Contextual Info: DfVKTE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO « VCB V M I N fV> M I N (V I M IN |mA) M AX |V) HFE @ VC 4 1C M IN -M A X IV I Im A l COB (pl| M A X FT | M H (| PN1507 P N I56 6 PN1613 PN1708 PN1711 NPN NPN NPN NPN NPN TO-92 (72) TO-92 (72) TO-92 (72) TO-92 (72)
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pn1507pn1613pn1708pn1711+8pn1974pn2222pn2222apn2224pn2242pn2243pn2218pn2219a
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MPS9631
Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12
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mps9600o-92amps9601mps9602+9mps9630mps9631t1s91mps9632tis92mps9633se4010tis61mps9634
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MPS9633
Abstract: MPS9630 MPS9631 to-92a MPS6512 MPS6566 MPS6574 MPS3177 MPS3608 MPS3708
Contextual Info: Low Level and G en eral Purpose Amplifiers > TYPE M AXIM UM RATINGS V CE SAT h fe 'c Pd ImW) ImA) CEO (V) 'c min max ImA) UJ V > °> NO. CASE £ < ,_l O a. max 'c (V) ImAI M PS3608 M PS3707 M PS3708 M PS3709 M PS3710 P N N N N T O -9 2 A T O -9 2 A T O -9 2 A
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mps3608o-92amps3707mps3708+10mps3709mps3710mps9633mps9630mps9631to-92amps6512mps6566mps6574mps3177
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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kt420ac176cv7002bc109 transistor equivalent list+5bsy95adiffused alloybc146bcy70asy26
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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Newmarket Transistors
Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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st3042st30433n1203n121+162n3322n3332n3352n3362n3342scl16newmarket transistorssgs-ates transistors2g1082ac128-012n174 rca2bd1242g3812n1092g2712n123
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gk 106
Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
Contextual Info: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A | V CE (V) max (V) 'c (mA) MPS3608 MPS3707
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bgt170q0107mo-92agk 106+4bchlmicro electronics ltd transistortransistor to-106 422mps6566 transistor
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Bendix Transistors
Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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st3042st30433n1203n121+162n3322n3332n3352n3362n3342scl16bendix transistors2n1149rca 2n1184a2n11522n11512n1150rca 2n1174transitronemihus2n1193
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TIS90
Abstract: T1S97 TIS92 V/mpsa09
Contextual Info: Low Level and General Purpose Amplifiers MAXIMUM RATINGS V e to Pi Ic mW (mA) (V) H,"E VcE (V) max (V) Ic (mA) 2 10 10 0.1 10 10 10 10 5 5 0.5 0.4 0.4 0.5 0.5 50 10 10 10 10 300 # 500 300 # 700 300 1 10 1 0.1 1 5 5 5 5 5 0.5 0.5 0.5 10 10 10 - - 0.3 100
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mps6523mps6565mps6566mps6571+10mps6573mps6574mps6575mps6576mps8097mps8098tis90t1s97tis92v/mpsa09
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BC286
Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
Contextual Info: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l
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2s140962n15072n15662n1613+162ni7112n18892n18902n18932n19732n1974bc2862n32522n55s12n3304cs1602bbc3206mps9680tbc2388mps9681tmps901
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MPS3388
Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
Contextual Info: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40
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2n1711pn171110ma/10v150ma+122n1893pn169310ma/10pn3566mps33882n3783mpss172a5t3904sdmfl2n3704pn4227mps3704
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st3043
Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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st3042st30433n1203n121+122n3322n3332n3352n3362n3342scl16low-power silicon npn403522n773bsy112s0012sc859
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