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    MPS8097 Search Results

    MPS8097 Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MPS8097
    Crimson Semiconductor Transistor Selection Guide Scan PDF 1.48MB 36
    MPS8097
    Micro Electronics Semiconductor Device Data Book Scan PDF 65.4KB 1
    MPS8097
    Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR Scan PDF 56.44KB 2
    MPS8097
    Motorola Semiconductor Data Library Volume 3 1974 Scan PDF 194.69KB 5
    MPS8097
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 113.6KB 1
    MPS8097
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.25KB 1
    MPS8097
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 38.29KB 1
    MPS8097
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 172.33KB 1
    MPS8097
    Unknown Cross Reference Datasheet Scan PDF 35.42KB 1
    MPS8097
    Samsung Electronics NPN (AMPLIFIER TRANSISTOR) Scan PDF 31.69KB 1
    MPS8097C
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.25KB 1
    SF Impression Pixel

    MPS8097 Price and Stock

    Central Semiconductor Corp

    Central Semiconductor Corp MPS8097 PBFREE

    Transistor GP BJT NPN 40V 200mA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: MPS8097 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MPS8097 PBFREE Box 2,500
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    • 10000 $0.29
    Buy Now

    Central Semiconductor Corp MPS8097 APP TIN/LEAD

    Transistor GP BJT NPN 40V 200mA 3-Pin Through Hole TO-92 Ammo - Ammo Pack (Alt: MPS8097 APP TIN/LEAD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MPS8097 APP TIN/LEAD Ammo Pack 2,000
    • 1 -
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    • 10000 $0.38
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    Central Semiconductor Corp MPS8097 TRE PBFREE

    Transistor GP BJT NPN 40V 200mA 3-Pin Through Hole TO-92 T/R - Tape and Reel (Alt: MPS8097 TRE PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MPS8097 TRE PBFREE Tape & Reel 4,000
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    • 10000 $0.33
    Buy Now

    Central Semiconductor Corp MPS8097 TRA PBFREE

    Transistor GP BJT NPN 40V 200mA 3-Pin Through Hole TO-92 T/R - Tape and Reel (Alt: MPS8097 TRA PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MPS8097 TRA PBFREE Tape & Reel 4,000
    • 1 -
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    • 100 -
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    • 10000 $0.33
    Buy Now

    Central Semiconductor Corp MPS8097 TRE TIN/LEAD

    Transistor GP BJT NPN 40V 200mA 3-Pin Through Hole TO-92 T/R - Tape and Reel (Alt: MPS8097 TRE TIN/LEAD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MPS8097 TRE TIN/LEAD Tape & Reel 2,000
    • 1 -
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    • 100 -
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    • 10000 $0.38
    Buy Now

    MPS8097 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc 5200 transistor data

    Abstract: a 1023 transistor 2SC 968 NPN Transistor transistor noise transistor 1012 IC ADC 3511 MPS8097 2sc 965 transistor afy2
    Contextual Info: MPS8097 SILICON NPN SILCON ANNULAR LOW-NOISE, HIG H-G AIN AM PLIFIER TRANSISTOR . . designed fo r use in lo w -level, lo w -noise a m p lifie r a p p lica tions. C o lle c to r-E m itte r B reakd ow n V o ltage — NPN SILICON LOW NOISE, HIG H GAIN AM PLIFIER


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    mps80972sc 5200 transistor dataa 1023 transistor2sc 968 npn transistor+5transistor noisetransistor 1012ic adc 35112sc 965 transistorafy2 PDF

    3075D

    Contextual Info: G E SOLID STATE St DE | 3075DÛ1 0008072 U | ' T - 2 7 - ^ Signal Transistors r— j e MPS8097.98 Silicon Transistors The General Electric MPS8097 and MPS8098 are silicon NPN passivated, planar, epitaxial transistors designed for use in low-noise, low-level


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    3075dmps8097mps8098ps8097+4ps8098100ma100/1a100mhz PDF

    Contextual Info: CRO MPS8097 NPN SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    mps8097t0-92a200ma350mw+44351llector-emitteroct-96100ma100mhz PDF

    T0-92A

    Abstract: MPS8097
    Contextual Info: MPS8097 NPN SILICON TRANSISTOR ya«XIQMMW8l»aM • rm r*m T T m n m m m rjm j!i¡a ín B jrrs e a e 7 z m a n *M rz z B a !is a a s w B *tB c n a n 6 B ^a T0-92A DESCRIPTION MPS8097 is NPN silicon plgpar epitaxial transistor designed for general purpose applications.


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    mps8097t0-92a200ma350mw+2100maic-10 PDF

    Contextual Info: M OT OR O L A SC XSTRS/R F 1SE D I b3fc,7ES4 □Qät.llb £ T-a^-ai MPS8097 M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VcEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Rating Ve b o 6.0 Vdc Collector Current — Continuous


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    mps8097 PDF

    TRANSISTOR 2341

    Abstract: T0-92A MPS8097
    Contextual Info: IVI SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. ? •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    mps8097t0-92a200ma350mw+6100paoct-96100ma100mhzwidth300transistor 2341 PDF

    Contextual Info: MPS8097 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)30n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    mps8097freq100m PDF

    2n5088 transistor

    Abstract: mps8097 2N5088 LC100A I2921 MPS-8097
    Contextual Info: . SAMSUNG SEMI C O NDU CT OR INC MPS8097 14E D | 7^4142 000733b 5 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C oltector-Em ltter Voltage: Vc*o=40V • C o lle cto r D issipa tion : P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic


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    000735bmps8097625mw2n5088+6100/ja10ksj2n5088 transistorlc100ai2921mps-8097 PDF

    transistor 2n5088 equivalent

    Contextual Info: .SAMSUNG SE MI CON DUCTOR INC MPS8097 1ME D | 7 ^ 4 1 4 2 000731b 5 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vc*o=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol


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    000731bmps8097625mw2n5088+1transistor 2n5088 equivalent PDF

    mpsa25c

    Abstract: MPS-A12 MPS6576C
    Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type


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    mps6521cmps6530cmps6531cmps6532c+3mpsa25cmps-a12mps6576c PDF

    Contextual Info: I Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LÈAD CODE v CBO v CBO v CEO v EBO 'CBO (V) (V) (V) a v CE @ <c h F:E (V) (V) *CES (mA) VC E (S /IT) 'C (V) (mA) *hfe(1kHZ) MIN *VCES MIN MIN *ICEV MIN MAX Cob (pF) *C ,b MAX h NF


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    mps3710mps3711mps3721mpsa18+1mpsa20 PDF

    Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10


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    mps2716mps2923mps2924mps2925+2mps2926o-92a PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268 PDF

    MPS5308

    Abstract: CRB 1.0 m MPSA18 MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPS5306
    Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE (V) VCB (V) 20 MIN 90 MAX 330 MAX 6.0 *ICES *ICEV MAX 100 hFE @ VCE @ IC VCE (SAT) @ IC *hFE (1kHZ) (V) (mA) (V) (mA) Cob fT NF toff MPS3710 NPN LOW NOISE EBC MIN


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    mps3710mps3711mps3721mps3826+8mpsa14mpsa18mpsa20mps5308crb 1.0 mmps3827mps5172mps5306 PDF

    100ria

    Abstract: 25V6K RN5305 2N4494
    Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    2n3707mps37072n3708mps3708+102n3709mps37092n3701mps37102n3711mps3711100ria25v6krn53052n4494 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor PDF

    2N3859

    Contextual Info: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )


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    2n3859 PDF

    MPS-004

    Abstract: MPS004 2N4125 EBC 2n3704
    Contextual Info: T ransistors TO-92 JEDEC Standards Numbers #NPN Transistors General purpose small signal amplifiers Part No. Package BVcbo Min. BVceo Min. BVebo Min. iCBO Max. @VCB Min. Max. @lc & Vce V ce (sat) Max. 4 Vbe (sat) Max. @lc Cob Max. Min. 10pF 180MHz fr @ Ic


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    2n29252n3711mps37112n3860+8100na180mhz200mamps-a63mps-004mps0042n4125 ebc2n3704 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


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    2n53812n2926transistors to-92 case2n3707 PDF

    sprague MPSA05

    Contextual Info: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60


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    fls13fls0mps3721mps3826mps3827+6mps5127mps5131mps5132mps5133o-226aa/stylesprague mpsa05 PDF

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    2n15072n15662ni6132n1889+162n18902n18932n19732n19742ni975o-237cs9011jmps151pn5180mps4424bc56088c527-252n3304bc5568pn2897mps9633c PDF

    PE109b

    Abstract: 2SC654 50N15 2SC944 2SC1327 10K180 to-118 BF274 PMBT4401 PE109
    Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 BF216 PE109B PE109C BF218 BF217 2N3512 2N2787 2N2790 2N5417 BSS81B 2N2792 2N2788 2N2791 HSE135 BSS81C UPI4046 UP14046-46 2N2789 2N2789S 2 2N2789S 2SC1327 BF219 BF220 PTC101


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    bf216pe109bpe109cbf218+15bf2172n35122n27872n27902n5417bss81b2sc65450n152sc9442sc132710k180to-118bf274pmbt4401pe109 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent PDF