2SC119 Search Results

12OG

Abstract: 2-21A1A
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA T b <D IS C R E T E / O P T O ' ‘ SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) DE J t U H T S S O T 2SC1195 5òC 07442 rrH HIGH VOLTAGE SWITCHING APPLICATIONS. 1 - CO h - i- 4 - -+ 0.09

Contextual Info: Powered -a by 18 T0-3 CAN PACKAGE SERIES n 1 TO-3 ICminer.com H CD > Ö H H n 70 m Electronic-Library —3 Application MAX. fc Type No. NPN Power Am p. 2SC1195 PC PNP 2SA739 f T TYP. v CE(sat) M A X < *v CB0 Tc=2!?C I ; DC-DC Converter Series Reg. ! v CE0

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 Sb T O SH IBA DE I TDTTSSD QDD7444 2 | b 6C D ISC R ET E /O P T O Ú7 4 4 4 0 ~ f~ 2 f 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE _ Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. ¡ZÍ9.39MAX. HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.

Contextual Info: 2SC1196 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A)750m Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition)

KT601

Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect

2sc1195

Contextual Info: JMnic Product Specification 2SC1195 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation ・Low collector saturation voltage APPLICATIONS ・For line operated audio output amplifier and switching power supply drivers applications

ta 306

Abstract: 2SC1199 TA306
Contextual Info: 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. 09.39MAK HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. .08 .4 5MAX . tzrzrn FEATURES: . Low Noise for High and Low Frequency : N F = 4 .O d B M a x .

2SC1195

Abstract: AC73 opto 501
Contextual Info: TOSHIBA -CDISCRETE/0PT03- Tb DE I TDTTaSD 0DD74MH T 5 òC 9097250 TOSHIBA <D ISC RET E/ OP TO 07442 2SC1195 S IL IC O N NPN T R IP L E D IF F U SE D TYPE PCT PROCESS) REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High Voltage : VCE0=200V

2SD878

Abstract: 2SC521A 2SC519A 2SC520A 2N6251 2SA656A 2SB554
Contextual Info: —3 O 18 TO-3 CAN PACKAGE SERIES n TO-3 Application 1MAX. fc Type No. NPN Power Amp. 2SC1195 2SD81Î ; 2SC521A ! hFE PC *v CB0 Tcf^ C PNP j ; DC-DC Converter Series Reg. I v CE0 2SA739 (A) (V) (W) 1.5 200 100 3 400 50 6 f j TYP. v CE(sat) M A X > V CH •c

2SC1135

Abstract: 2SC1168 2sc1451 2SC1426 2sc3800 2sd1111 toshiba 2sc783 2SD641 2SC710 2SD642
Contextual Info: - 114 - S! £ T y p e No. * tt £ Manuf. H £ SANYO m 2SC 1424 s 2SC 1425 B m 2SC 1426 2SC 1427 M NEC HITACHI ÍL "M ± FU J ITSU il tö T MATSUSHITA m h MITSUBISHI □ — A ROHM 2SC1199 s 2 S C 1200 m 2SC 3 8 7 A T M m. 2SC 1428 2SC 1429 V ~— * 2SC 1430

Contextual Info: 2SC1195 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1195

Abstract: AC73 opto 501 501 opto C9060
Contextual Info: TOSHIBA -CDISCRETE/0PT03- Tb DE I TDTTaSD 0DD74MH T 5 òC 9097250 TOSHIBA <D ISC RET E/ OP TO 07442 2SC1195 S IL IC O N NPN T R IP L E D IF F U SE D TYPE PCT PROCESS) REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High Voltage : VCE0=200V

2SC1195

Contextual Info: SavantIC Semiconductor Product Specification 2SC1195 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·For line operated audio output amplifier and switching power supply drivers applications

2SC1199

Contextual Info: TOSHIBA {DISCRETE/OPTO* 9097250 St, T O SH IB A DE p TDTVSSD 0DD7MM4 2 | CDI S C R E T E / O PT O 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. gfe. 39MAX • HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt