2SD81 Search Results

2SD819

Contextual Info: 2SD819 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit In mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0S5.OMAX. FEATURES: eteLOMAX. • High Voltage :V c b q =1500V . Low Saturation Voltage :VcE sat =4V (Typ.) + 0.09 4.0— 0.03 (IC=3A, IB=0.8A) • High Speed

2SB747

Abstract: 2SD812
Contextual Info: Power Transistors 2SD812 2SD812 Silicon NPN Triple-Diffused Planar Type • High Pow er A m plifier C om plem entary Pair with 2SB747 Package D im ensions ■ Features • W ide a re a of s a fe ty o p e ra tio n ASO • G ood lin e a rity of D C c u r re n t gain

2SB747

Abstract: 2SD812
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB747 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD812 APPLICATIONS ·High power amplifier applications.

2SD0814A

Abstract: 2SD814A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2

2SD836

Abstract: 2SB750 Y7W MARKING 2SD836A 2SD814A j2540 MARKING Y7W 2SB750A 2SD813 2SD814
Contextual Info: PANASONIC INDL/ELEKiSEMI} 72C D I h^EflSM □□□T403 n • W ~ I T -2 -J -/S ;_ 2 S D 8 1 3 h 2SD813 '> ij N P N x tf £ =£■'> T7 ^U"70U — N P N Epitaxial Planar Output Amplifier ■ 1# ^ / F e a t u r e s

2Sd811

Contextual Info: 2SD811 NPN POWER TRANSISTOR High Power Switching Regulator Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,20 5,72 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

2SD813

Abstract: XN04503 XN4503
Contextual Info: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planer transistor ● 3 2 0.50+0.10 –0.05 1.1+0.2 –0.1 10° 2SD0813(2SD813) x 2 elements • Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

2SD817

Contextual Info: Inchange Semiconductor Product Specification 2SD817 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・High voltage power switching TV horizontal deflection output applications

2SB747

Abstract: 2SD812
Contextual Info: SavantIC Semiconductor Product Specification 2SB747 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD812 ·Wide area of safe operation APPLICATIONS ·High power amplifier applications ·Suitable for 15~20W home stereo output

2SD814

Abstract: XN1507
Contextual Info: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)

SC-88A npn

Abstract: 2SD814 XP1507 4600ic
Contextual Info: Composite Transistors XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD814 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

2SD0814

Abstract: 2SD814 XN01507 XN1507
Contextual Info: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0814(2SD814) x 2 elements +0.1 +0.2 1.1 -0.1

2SD0814A

Abstract: 2SD814A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2 1 (0.95) (0.95)

2SD0814

Abstract: 2SD0814A 2SD814 2SD814A
Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD0814 base voltage 2SD0814A Collector to 2SD0814 1.45 0.95 0.95 +0.1

2SD818

Contextual Info: 2SD818 NPN POWER TRANSISTOR Colour TV Horizontal Output Applications DIM A B C D E F G H J K L M "I MIN _ - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 3,84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base) Collector current

2SD814

Abstract: 2SD814A
Contextual Info: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current

2SD817

Contextual Info: SavantIC Semiconductor Product Specification 2SD817 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications

2SD814

Abstract: 2SD814A marking LQ
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB792A

Abstract: 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor
Contextual Info: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm 0.40+0.10 ñ0.05 • Features Parameter Symbol Collector to 2SB0792 base voltage

2SB747

Abstract: 2SD812
Contextual Info: Power Transistors 2S D 812 2SD812 Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Pow er Am plifier C om plem entary Pair with 2 S B 7 4 7 Unit ! mm • Features 4. 8max. • W ide a re a of s a fe ty o p era tio n A SO 1.5max. • G ood lin e a rity of D C c u rre n t gain (Ufe )

2SD1206

Abstract: 2SB895 2SB895a 2SB894 2SD1206 R 2SD1206 S 2SB792 2SD814 2SD946 2SD946A
Contextual Info: PANASONIC INDL/ELEK-CSEflI} 7EC D | ^ 3 5 0 5 4 □ □□âflci2 2 V '^yV T Sÿ * ' 2SB792 2SB792 '> IJ ZI y PNP •3f“f l2 /S i P N P E p itax ia l P la n a r X t °2 l ^ l a t e f f l /H ig h Voltage Low-noise Amplifier 2SD814 £ ^ y ? ' J U/'Com plem entary Pair with 2SD814

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO