2SD0814A Search Results

2SD0814A

Abstract: 2SD814A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)

2SD0814A

Abstract: 2SD814A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2 1 (0.95) (0.95)

2SD0814

Abstract: 2SD0814A 2SD814 2SD814A
Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD0814 base voltage 2SD0814A Collector to 2SD0814 1.45 0.95 0.95 +0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO

2SD0814A

Abstract: 2SD814A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05

2SD0814A

Abstract: 2SD814A
Contextual Info: Transistor 2SD0814A 2SD814A Silicon NPN epitaxial planar type Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector to emitter voltage VCEO

2SD0814A

Abstract: 2SD814A
Contextual Info: Transistors 2SD0814A 2SD814A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

matsushita Transistor hFE CLASSIFICATION Marking

Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the