2SD946A Search Results

2SD0946

Abstract: 2SD0946A 2SD0946B 2SD946 2SD946A 2SD946B
Contextual Info: Power Transistors 2SD0946, 2SD0946A, 2SD0946B 2SD946, 2SD946A, 2SD946B Unit: mm Silicon NPN epitaxial planar type darlington 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer

2SD946

Abstract: 2SB895 2SD950 2SB895A 2SD946A 2SD951 I-H-1000
Contextual Info: PANASONIC INDL/ELEKiSEMIJ 72C D | t,^3EflS4 DDCHMSM S | ^ y V T s S _ 2SD946, 2SD946A 2SD946, 2SD946A '> \ ZJ y N P N U > b > / S i NPN Epitaxial Planar Darlington • ifkMi&if f i f f l / A F Amplifier 2SB895,

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1

2sd946b

Abstract: 2SD0946 2SD0946A 2SD0946B 2SD1263 2SD946 2SD946A
Contextual Info: Power Transistors 2SD0946 2SD946 , 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946

2SD946

Abstract: 2SB895 2SB895A LA1B 2SD94 2SD946A 2SD946B Darlington pair IC Darlington pair IC high current
Contextual Info: Power Transistors 2SD946, 2SD946A, 2SD946B 2SD946, 2SD946A, 2SD946B* Package D im ensions U ni t 1 mm Silicon PNP Epitaxial Planar Darlington Type AF A m plifier C om plem entary Pair w ith 2SB895, 2S B895A • Features • H igh DC c u r r e n t gain d esig n

2SD0946B

Abstract: 2SD946 2SD946A 2SD946B 2SD0946 2SD0946A
Contextual Info: Power Transistors 2SD0946, 2SD0946A, 2SD0946B 2SD946, 2SD946A, 2SD946B Unit: mm Silicon NPN epitaxial planar type darlington 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer

2SB895

Abstract: 2SD946 2SB895A 2SD946A 2SD946B
Contextual Info: Power Transistors 2SD946, 2SD946A, 2SD946B 2SD946, 2SD946A, 2SD946B • Package D im ensions Unit 1 mm Silicon PNP Epitaxial Planar Darlington Type AF Amplifier C om plem entary Pair with 2SB895, 2S B895A ■ Features • High DC current gain J i f e design suitable for m otor driver and

2SD0946

Abstract: 2SD0946A 2SD0946B 2SD946 2SD946A 2SD946B
Contextual Info: Power Transistors 2SD0946 2SD946 , 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD921

Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SD945

Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350

2SD1206

Abstract: 2SB895 2SB895a 2SB894 2SD1206 R 2SD1206 S 2SB792 2SD814 2SD946 2SD946A
Contextual Info: PANASONIC INDL/ELEK-CSEflI} 7EC D | ^ 3 5 0 5 4 □ □□âflci2 2 V '^yV T Sÿ * ' 2SB792 2SB792 '> IJ ZI y PNP •3f“f l2 /S i P N P E p itax ia l P la n a r X t °2 l ^ l a t e f f l /H ig h Voltage Low-noise Amplifier 2SD814 £ ^ y ? ' J U/'Com plem entary Pair with 2SD814

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SC3660

Abstract: 2sc3153 2SC4008 2sc3052 2sc3211 2SC3714 2SC1627 3692 nec 2sc3694 nec 2SD1941
Contextual Info: 17 0 - % tt J = ft SANYO 2SC3153 2SC3153 2SC4123 2SC4123 2SC4124 2SC4125 JK TOSHIBA 2SC3657 m, NEC 2SC3535 2SC3536 a il HITACHI 2SC3322 IH 3686 / 3687J 3688 / 3689 J 3690 3691 / 3692 ^ 3693 ^ 3694 / 3695 3696 ✓ 3697 3701 3702 3704 3705 / 3707 3708 / 3709 ✓

2SB832

Abstract: 2sd1047 equivalent 2SB837 2SB843 2SD1077 2sb875 2SB803 2SB818 2sb895 2SB845
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB801 -45 -5 -1A 400 150 100 -2 -150 80* 26 2SB802 -60 -5 -1A

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691