SIR880DP Search Results

AN609

Abstract: SiR880DP
Contextual Info: SiR880DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

SiR880DP

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 VDS (V) 80 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Sir880dp

Abstract: 20-A64
Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

SiR880DP

Abstract: v2410
Contextual Info: SPICE Device Model SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model SiR880DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

60 SMD 5050 Ultra Bright LEDs

Abstract: MMA 0204 HV - Professional
Contextual Info: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative

Contextual Info: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n High Voltage Operation: Up to 60V Large 1Ω Gate Drivers No Current Sense Resistor Required Dual N-Channel MOSFET Synchronous Drive Extremely Fast Transient Response

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

so8 footprint

Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®