KMM5322000 Search Results

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung

KMM5322000BV-6

Abstract: KMM5322000BV6 kmm5322000b KMM5322000BV KMM532200 DU26
Contextual Info: KMM53: ’SÀVJlt BV/BVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5322000BV is a 2M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5322000BV consist of sixteen CMOS 1M x 4 bit

Contextual Info: DRAM MODULE 8 Mega Byte KMM5322000W/WG Fast Page Mode 2M x32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range' T he Sam sung K M M 5322000W is a 1M bit x 32 D ynam ic RAM high density m em ory module. The

KMM5322000AW

Contextual Info: DRAM MODULE_ 8 Mega Byte KMM5322000AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322000AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322000AW consists of four CMOS

KMM5322000C

Abstract: 44C10 KMm5322000cv KMM5322
Contextual Info: DRAM MODULE 8 Mega Byte KMM5322000CV/CVG Fast Pagek Mjbde 2Mx32 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5322000CV is a 2M bit x 32 • Performance Range: tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The Sam sung

Contextual Info: KMM5322000AV/AVG DRAM MODULES 2Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1M x4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin

DU 9

Contextual Info: PRELIMINARY KM M5322000W/WG DRAM MODULES 2 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5322000W-7 • • • • • • • true tcAc tnc 70ns 20ns 130ns KM M5322000W-8 80ns 20ns 150ns KM M5322000W-10 100ns 25ns

Contextual Info: DRAM MODULES KMM5322000AV/AVG 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5322000AV- 7 • • • • • • • tR A C tC A C tR C 70ns 20 ns 130ns KMM5322000AV- 8 80ns 20 ns 150ns KMM5322000AV-10 100 ns 25ns 180ns

KMM5322000-10

Abstract: KMM5322000
Contextual Info: KMM532200QAV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

KM44C1000

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

KMM5334100

Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

SIMM 1Mx9 30pin

Abstract: simm EDO 72pin KMM51442100ATG KMM532
Contextual Info: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

KMM591000AN8

Abstract: KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A
Contextual Info: FUNCTION GUIDE 1. Introduction 1.1 Dynamic RAM di SAMSUNG Electronics 11 FUNCTION GUIDE ’ New Product eg SAMSUNG Electronics 12 FUNCTION GUIDE 1.2 Dynamic RAM Module CMOS T- 1M x8 - KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10

KMM5324100AV

Contextual Info: TABLE OF CONTENTS DRAM Module Product Guide DRAM SIMM Based on 16M DRAM 5V 4 M x 8 . KMM584100AN-5/6/7/8. 4 M x 8 . KM M584100AKN-5/6/7/8. 4 M x 9 . KMM5941OOAN-5/6/7/8.

AG10

Abstract: km416c256 1m maskrom KM68B1002-10
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10