MSM514101 Search Results

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

transistor a7g

Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Contextual Info: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.

Contextual Info: O K I semiconductor M SM 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit. The technology used to fabricate the MSM514101 is OKI’s CMOS silicon gate process tech­

26-PIN

Abstract: MSM514 ZIP20-P-400
Contextual Info: O K I Semiconductor MSM514101 B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM514101A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The M S M 514101A /A L is a new generation dynamic RAM organized as 4,194,304-w ord x 1 bit. The technology used to fabricate the M SM 514101A /A L is OKI's C M O S silicon gate

Contextual Info: O K I Semiconductor MSM514101A/AL 4,194,304-Word x 1-Bit D Y N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The M S M 514101A /A L is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M SM 514101 A /A L is OKI's CMOS silicon gate process technology.

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

Contextual Info: O K I semiconductor MSM514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit. The technology used to fabricate the MSM514101 is OKI's CMOS silicon gate process tech­

Contextual Info: O K I semiconductor M S M 5 1 4 1 0 1 A /A L 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1bit. The technology used to fabricate the MSM514101A/AL is OKI's CMOS silicon gate

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

ci 555

Abstract: MN414100ASJ MT4C1004-7 20PIN MCM54100A-C70 MCM54100A-C80 MCM54101A-70 MCM54101A-80 MCM54102A-60 MCM54102A-70
Contextual Info: - fe ít £ PC TRAC ns) TRCY min (ns) max TCAD min (ns) TAH ein (ns) TP Y n am C R A M (4 19 4 3 0 4 X 1 ) m n tt min WCY rain •in TDH (ns) (ns) (ns) TRWC V D D or V C C I DD max (ns) (V) A M (ibA) I DD STANDBY ( I SB/ I SB2) OnA) VIL nax (V) 1N ta [*typ]

24 pin 16mbit DRAM

Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
Contextual Info: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)

A2H3

Abstract: transistor A5G TRC 561 a3 diagram 20-PIN 26-PIN ZIP20-P-400-W1 A2E3
Contextual Info: O K I Semiconductor MSM5 1 4 1 0 1 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The M SM 514101A/AL is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M SM 514101A/AL is OKI's CMOS silicon gate process technology.

MSM511000

Abstract: MSM514400 MSM548263
Contextual Info: ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Fast Access Operation for DRAMs ■ INTRODUCTION Increased processor speeds and high resolution graphics have placed added performance demands on the

MSM6389B

Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258