TC514400 Search Results

K557

Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
Contextual Info: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well

KSR128

Abstract: a95x A348 20 pin
Contextual Info: TC514400ÂPL/ÂJL/ASJL/AZL-60 * This is advanced information and specifica­ tions are subject to change without notice. 1,048,576 W ORD x 4 BIT D YN A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by

Contextual Info: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as

MO-23

Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Contextual Info: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as

AZL-70

Contextual Info: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the

Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY D ESC R IPTIO N The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

Contextual Info: Ig B g g B g M 111 » f ï j i- filli 2,0 97 ,1 5 2 W O RDS x 4 0 BIT D Y N A M IC RAM 1 >| f 8 : r « ; | H H iiili PRELIMINARY M O D U LE DESCRIPTION The THM402020SG is a 2,097,152 words by 40 bits dynamic RAM module which assembled 20 pcs of TC514400J on the printed circuit board.

THM401020

Contextual Info: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and

Contextual Info: THM402020SG-80, 1 2,097,152 WORDSx40 BIT DYNAMIC RAM PRELIMINARY MODULE DESCRIPTION The THM402020SG is a 2,097,152 words by 40 bits dynamic RAM module which assembled 20 pcs of TC514400J on the printed circuit board. The THM402020SG is optimized for application to the systems which are required high density and

TC514400

Abstract: SOJ26-P-300A TC514400AF
Contextual Info: TOSHIBA- TC514400ASr/AZ/AFP60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TCS14400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as

kx-5t

Abstract: KAS 34
Contextual Info: TOSHIBA THM362060AS/ASG -60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362060A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices on the printed circuit board. This module is optimized for applications which require

TC514400

Abstract: TCWP
Contextual Info: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4

THM322020ASG60

Abstract: cx53
Contextual Info: TOSHIBA THM322020AS/ASG -60/70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM322020A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices on the printed circuit board. This module can be used as well as 4,194,304 word by 16

aj 312

Abstract: AZ60 514400 TC514400AZ
Contextual Info: TC514400AP/AJ/ASJ/AZ-60 1,0 4 8 ,5 7 6 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4

Contextual Info: IM R R n S lH H I! PRELIM INARY 1,048,576 W O R D S x 9 BIT D Y N A M IC R A M M O D U L E D ESC R IP TIO N The THM91070S/L is a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514400J and Ipc of TC511000AJ on the printed circuit board.

tc511000

Contextual Info: TOSHIBA LOGIC/MEMORY MEE 2,097,152 WORDS X 36 BIT DYNAMIC RAM D • ^ 7 2 4 0 MODULE 0021533 2 I PRELIMINARY DESCRIPTION The THM36202QS is a 2,097,152 words by 36 bits dynam ic RAM module which assembled 16 pcs of TC514400J and 8 pcs of TC511000AJ on the printed circuit board. The TI1M362U20S can be as well

ZIP20-P-400A

Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: TOSHIBA LOGIC/MgMORY ^=17240 0021174 1 • T OS 2 * This is advanced information and specifications are'subject to change without notice. 1 ,043,575 li'ORDx 4 BIT DYNAMIC RAM DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits.

Contextual Info: BA THM361070AS/ASG -60/70/80 1,048,576 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 361070AS/ASG is a 1,048,576 w ord by 36 bit dynam ic RA M m odule which is assem bled with 8 TC514400SJ devices on the printed circuit board. T his module is optim ized for applications which require

Contextual Info: INTEGRATED CIRCUIT T O S H IB A T^ UKI^ A1 TECHNICAL _ aT A DATA TC514400AJ TC514400ASJ USING MODULE USING MODULE DRAM MODULE AC CONDITIONS No. 8 N0.8A C C O N D IT IO N S -1 1 9 9 1 -1 0 -0 1 TO SH IB A CORPORATION INTEGRATED CIRCUIT T O S H IB A TC514400AJ

Contextual Info: 2,097,152 W O R D S X 32 BIT D Y N A M IC RAM PRELIMINARY M O D ULE DESCRIPTION The THM322020S is a 2,097,152 words by 32 bits dynamic RAM module which assembled 16 pcs of TC514400J on the printed circuit board. The THM322020S can be as well used as 4,194,304 words by

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes Toshiba’s CMOS silicon gate process technology as well as

SG-10

Abstract: SG-80 TC514400J THM4010203G-80 THM401040SG-80 SG-10 C 1MHZ EA5 Ra module
Contextual Info: 1 , 0 4 8 , 5 7 6 W O R D S x 4 0 BIT D Y N A M I C RAM MODULE D E S C R IP T IO N The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled 10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and