002ST Search Results

DS05

Abstract: FPT-32P-M24
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–20818–1E FLASH MEMORY CMOS 2M 256K x 8 MBM29F002T/002B/002ST/002SB • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: * ' Ü LL •«Mt r-1 >L* »f '•ì'-^ÌliÌ h #gfc.,K-.»,1&& yWtol „sS w?r t^t^SÉV’ » itK&m*I I FUJITSU SEMICONDUCTOR DATA SHEET D S05- 2 08 1 8- 1E FLASH MEMORY CMOS 2M 256K x 8 MBM29F002T/002B/002ST/002SB ■ DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase

F002T

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T/002B/002ST/002SB - 70-90 -12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Package option

75p328

Abstract: D75328
Contextual Info: NEC N E C ELECTRON ICS INC 30E D • b427525 002ST50 T ■ *iPD75328/75P328 4-Bit Microcomputers With LCD Controller/Driver and A/D Converter NEC Electronics Inc. _ T - W - W - t f Description The juPD75328 and //PD75P328 are high performance

FPT-32P-M24

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20818-2E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T/002B/002ST/002SB -70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: HN624316 Series Preliminary 16M 1M x 16-bit and (2M x 8-bit) Mask ROM • DESCRIPTION T h e H ita c h i H N 6 2 4 3 1 6 is a 1 6 -M e g a b it C M O S M a sk Program m able Read O nly M em ory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The high density and high speed provide enough capacity and

Contextual Info: www.fairchildsemi.com RC1585 5A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The RC1585 and RC1585-1.5 are low dropout three-terminal regulators with 5A output current capability. These devices have been optimized for low voltage applications including

RC1585M

Contextual Info: www.fairchildsemi.com RC1585 5A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The RC1585 and RC1585-1.5 are low dropout three-terminal regulators with 5A output current capability. These devices have been optimized for low voltage applications including

Contextual Info: RFX144V24-S23 and RFX96V24-S23 O Rockwell RFX144V24-S23 and RFX96V24-S23 MONOFAX Modem with DigiTalk Voice/ADPCM Audio, DigiTalk Speakerphone, and V.23 Full-Duplex Options INTRODUCTION The DigiTalk™ Speakerphone -S Option The Rockwell RFX144V24-S23 and RFX96V24-S23

RC1585T

Abstract: 1N4002 diode download datasheet rc1585 RC1585D RC1585M RC1585MC Xicon 10uF
Contextual Info: www.fairchildsemi.com RC1585 5A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The RC1585 and RC1585-1.5 are low dropout three-terminal regulators with 5A output current capability. These devices have been optimized for low voltage applications including

RC1585

Abstract: RC1585D RC1585M RC1585MC RC1585T crowbar circuit
Contextual Info: www.fairchildsemi.com RC1585 5A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The RC1585 and RC1585-1.5 are low dropout three-terminal regulators with 5A output current capability. These devices have been optimized for low voltage applications including

Contextual Info: www.fairchildsemi.com RC1585 5A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The RC1585 and RC1585-1.5 are low dropout three-terminal regulators with 5A output current capability. These devices have been optimized for low voltage applications including

Contextual Info: NEC N E C ELECTRONICS INC 3DE D • fci427SE5 0 0 2 5 3 1 4 3 ■ pPD7530x/31x/P308/P316 4-Bit Microcomputers With LCD Control ier/Driver NEC Electronics Inc. r- v t- n - w r - ‘+*1 - 1*1 '£-*i Description The pPD7530x/31x is a family of high-performance

M29F002T90

Abstract: MBM29F002
Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT M B M29F002T-90-X/-12-x/M B M29F002B-90-X/-12-x M B 002ST-90-X -12-x/M B M29 F002S B-90-x -12-x • FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible w ith JEDEC-standard com m ands

Contextual Info: TOSHIBA- TC514900AJL70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: BA THM361070AS/ASG -60/70/80 1,048,576 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 361070AS/ASG is a 1,048,576 w ord by 36 bit dynam ic RA M m odule which is assem bled with 8 TC514400SJ devices on the printed circuit board. T his module is optim ized for applications which require

A3TE

Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
Contextual Info: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: Philips Semiconductors b b S 3 ^31 0055^55 577 M IN AMER PHILIPS/DISCRETE APX Product specification b 7 E l - NPN general purpose transistor FEATURES PMSS3904 PIN CONFIGURATION • S-mini package. DESCRIPTION NPN transistor in a plastic SOT323

pid u 13t

Contextual Info: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS

diode IN4048 equivalent

Abstract: IS0485
Contextual Info: B U R R -B R O W N IS0485 Isolated RS-485 DIFFERENTIAL BUS TRANSCEIVER FEATURES DESCRIPTION • RS-485 AND RS-422 COMPATIBLE The IS0485 differential, isolated bus transceiver uses Burr-Brown’s capacitively coupled isolation technol­ ogy to provide high-speed, low cost bus isolation. The

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 8 1 6 0 B J ,T P , R T -6 ,- 7 ,- 8 ,-6 S ,-7 S ,- 8 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic R AM S, fabricated with the high performance C M OS process,and is ideal for

TC514170BJ-80

Abstract: TC514170 TC514170BJ80 TC514170BJ70 TC514170BJ-70 tc514170b
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: Shrouded Headers 2.54 x 2.54 mm 0.100 x 0.100 in. Description Right-Angle 2-Row Header, Series 65461 (BOO 0 O cc n r r" Ordering Data Base No. 65461 □□ □□ □ -X X X Base number Number of Positions Dash No. 2x3 2x3 2x5 -034 -052 -019 2x5 2x5 2x6

T0263AB

Abstract: SBLB2030CT SBLB2040CT
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT SBLB2030CT AND SBLB2040CT SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 20.0 Amperes FEATURES T0-263AB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction,