DS05 Search Results

XC95144XL-10TQ144I

Abstract: XC95144XL-10TQG100C XAPP114 XAPP427 XC9500XL XC95144 XC95144XL XC95144XL-5-CS144 XC95144XL-5TQ100 xc95144xl tq144
Contextual Info: XC95144XL High Performance CPLD R DS056 v1.8 July 15, 2005 5 Product Specification Features Power Estimation • • • • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. To help reduce power dissipation, each macrocell

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

DS0518

Contextual Info: DAICO INDUSTRIES INC 2ÛE SbG4^2Q D □□01441 *1 • DAI T-51-11 R f• QNO Rf7 GND GNO RFCOM GND -5V GNO RFC GNO DS0518 SP8T RF5 100-1100 MHz +38 dBm 3rd ORDER IP BCD TTL DRIVER SMALL 24 PIN PACKAGE COWT1COMT2CONT3 OPERATING CHARACTERISTICS PARAMETER CURRENT DRAIN

MB82D01181E

Abstract: MB82D01181E-60L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11424-4E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01181E-60L • DESCRIPTION MB82D01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

FPT-44P-M08

Abstract: MBM30LV0064 BGA-52P-M01
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

MBM29F040

Abstract: FPT-32P-M24 MBM29F040C R095
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C-55/-70/-90 • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11406-1E MEMORY CMOS 2 x 512 K × 16 Bit Single Data Rate I/F FCRAMTM Extended Temp.Version Consumer/Embedded Application Specific Memory MB81E161622-10-X/-12-X CMOS 2-Bank × 524,288-Word × 16 Bit Fast Cycle Random Access Memory (FCRAM) with Single Data Rate

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

FPT-48P-M19

Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

ADH020FY9SMT

Abstract: ADH020FY9-SR IOP321 tyco 5V 4a
Contextual Info: Data Sheet Jan 20, 2005 Document No: DS05-004 ver.1.0 PDF name: lynx_dual_ds.pdf Austin LynxTM Dual Output Non-isolated Power Modules: 4.5 – 5.5Vdc input; 2.6Vdc/1.3Vdc Outputs; 5A Output Current Each Features ƒ Dual output non-isolated Module ƒ Delivers up to 5A output current from each output

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

8117400A

Contextual Info: cP FUJITSU DS05-11210-1E DATA SHEET MEMORY CMOS 8M x 32 FAST PAGE MODE DRAM MODULE MB85392A -60/-70 CMOS 4M x 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu M B 85392A is a fully decoded, C M O S Dynamic Random Access Mem ory D R A M module consisting of sixteen

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

29F400TC

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90

Contextual Info: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2000-1o/M B84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

50REF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are