MO23 Search Results

FOOTPRINT MO-229 2X3 SOLDERING

Abstract: CAT24 program eeprom 24c04 6 jedec package MO-229 UDFN CAT24C02VP2I-GT3A CAT24C02WI-GT3A MO-236 CAT24C02HU4I-GT3A CAT24C02TDE-GT3A cat24c04
Contextual Info: CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM http://onsemi.com SOIC−8 W SUFFIX CASE 751BD Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized

Contextual Info: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

BUK9Y14-40B

Contextual Info: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This

PH3120L

Abstract: 10S100
Contextual Info: PH3120L N-channel TrenchMOS logic level FET Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

BUK7Y13-40B

Abstract: automotive abs 10S100
Contextual Info: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and

MO-23

Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Contextual Info: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as

QTAN0002

Abstract: QTAN0002 secrets of a successful qtouch AT42QT1010-TSHR Secrets of a Successful QTouch Design AT42QT1010 QT1010 proximity sensor interfacing with microcontroller QT100A sot23-6 marking code 561 at42qt10
Contextual Info: Features • Number of Keys: • • • • • • • • • • • • • • • • – One – Configurable as either a single key or a proximity sensor Technology: – Patented spread-spectrum charge-transfer direct mode Key outline sizes: – 6 mm x 6 mm or larger (panel thickness dependent); widely different sizes and

PSMN7R0-30YLC

Contextual Info: LF PA K PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

PSMN6R0-30YL

Contextual Info: LF PA K PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

FOOTPRINT MO-229 2X3 SOLDERING

Abstract: 24C32F 948AL C32F CAT24C32 517AX-01 marking code C5T 24c32 wp marking c5t YM 254
Contextual Info: CAT24C32 32-Kb I2C CMOS Serial EEPROM Description The CAT24C32 is a 32−Kb CMOS Serial EEPROM devices, internally organized as 4096 words of 8 bits each. It features a 32−byte page write buffer and supports the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.

Contextual Info: 10 15.24 ±0.25 DIM X + 0 .Z 5 - SEC TIO N A - A -KEEP OUT ZONE -165.00 MAX -148.00 MAX i 26.00 MAX 2X1 A 14.50 MIN (2X 4 127.83D A T E CODE (Y Y D D D )Z A A ^PAR T a - 5.00 NIN (2X) NO. 4222 □ E /11\ EX t PIN a 120- -PIN tt1 -11.50 NOTES: 1. -141.00-

MO-236

Abstract: MO-252 MO-236 MO-252 UDFN-8 517AZ-01 JEDEC MO-236/MO-252
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN8, 2x3 EXTENDED PAD CASE 517AZ−01 ISSUE O D DATE 23 JUL 2009 b A e L DAP SIZE 1.8 x 1.8 E2 E PIN #1 IDENTIFICATION A1 PIN #1 INDEX AREA D2 TOP VIEW SYMBOL MIN SIDE VIEW NOM MAX A 0.45 0.50 0.55 A1 0.00 0.02

MOSFET D340

Contextual Info: PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

4C530

Abstract: 003A MARKING PSMN4R5-30YLC PSMN4R5 4C530L
Contextual Info: PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK Rev. 02 — 30 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic

948AL

Abstract: CAT24C64 Q100
Contextual Info: CAT24C64 64 kb I2C CMOS Serial EEPROM Description The CAT24C64 is a 64 kb CMOS Serial EEPROM device, internally organized as 8192 words of 8 bits each. It features a 32−byte page write buffer and supports the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.

12945

Abstract: PH3830L
Contextual Info: PH3830L N-channel TrenchMOS logic level FET Rev. 03 — 2 March 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low thermal resistance

sot669

Abstract: PH5330E 12334
Contextual Info: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features

MO-235

Abstract: PSMN4R0-30YL
Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

NXP datasheets

Abstract: PSMN3R5-30YL
Contextual Info: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 14 October 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN2R5-30YL

Contextual Info: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been

Contextual Info: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 56 PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 May 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers