TC514400A Search Results

KSR128

Abstract: a95x A348 20 pin
Contextual Info: TC514400ÂPL/ÂJL/ASJL/AZL-60 * This is advanced information and specifica­ tions are subject to change without notice. 1,048,576 W ORD x 4 BIT D YN A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by

MO-23

Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Contextual Info: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as

AZL-70

Contextual Info: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the

TC514400

Abstract: SOJ26-P-300A TC514400AF
Contextual Info: TOSHIBA- TC514400ASr/AZ/AFP60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TCS14400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as

kx-5t

Abstract: KAS 34
Contextual Info: TOSHIBA THM362060AS/ASG -60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362060A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices on the printed circuit board. This module is optimized for applications which require

THM322020ASG60

Abstract: cx53
Contextual Info: TOSHIBA THM322020AS/ASG -60/70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM322020A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices on the printed circuit board. This module can be used as well as 4,194,304 word by 16

tc511000aj

Contextual Info: TOSHIBA THM362020AS/ASG -60/70/S0 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as

aj 312

Abstract: AZ60 514400 TC514400AZ
Contextual Info: TC514400AP/AJ/ASJ/AZ-60 1,0 4 8 ,5 7 6 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4

ZIP20-P-400A

Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: INTEGRATED CIRCUIT T O S H IB A T^ UKI^ A1 TECHNICAL _ aT A DATA TC514400AJ TC514400ASJ USING MODULE USING MODULE DRAM MODULE AC CONDITIONS No. 8 N0.8A C C O N D IT IO N S -1 1 9 9 1 -1 0 -0 1 TO SH IB A CORPORATION INTEGRATED CIRCUIT T O S H IB A TC514400AJ

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes Toshiba’s CMOS silicon gate process technology as well as

Contextual Info: TO 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

thm321000AS

Contextual Info: TOSHIBA THM321000AS/ASG -60/70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 321000A is a 1,048,576 w ord by 32 bit dynam ic RAM m odule w hich is assem bled with eight TC514400A SJ devices on the printed circuit board. This m odule can be used as well as 2,097,152 word by 16

Contextual Info: I¡a » l5 § p p if 1,048,576 W O R D x 4 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. D ESC RIPTIO N The TC514400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4

Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D PRELIMINARY y . 4 BIT D Y N A M I C R A M D ESC R IP TIO N The TC514400AP/AJ/ASJ/AZ is the ne’.v generation dynamic HAM organized 1,048,576 words by 4 bits. The TC514400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well

THM91070AS-60

Abstract: THM91070AS60 TC511000Aj THM91070AL-60 xxxxxx60
Contextual Info: 1,048,576 W O R D S X 9 BIT D YN A M IC RAM M ODULE DESCRIPTION The THM91070AS/AL and THM91070AS/AL are a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514400ASJ and 1 pcs of TC511000AJ/BJ on the printed circuit board. The These modules are optimized for application to the systems which are required high density and

512kx4

Abstract: SOJ26-P-350 1024X1024X4
Contextual Info: 4400AP/AJ/ASJ/AZ-80 j g g g g P/AJ/ASJ/AZ-10 m Ë È Mm ê s M S ii* ® S m PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well

514400A

Abstract: ATR80 514400AZ ATR60
Contextual Info: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514400AP/AJ/ASJ-60,-70,-80 TC514400AZ/AFT/ATR-60,-70,-80 TENTATIVE DATA 1,048,576 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The T C 514400A P /A J/A SJ/A Z /A FT /A T R is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6

TC514400APL

Abstract: A2L-70 D3P20-P-300C
Contextual Info: PRELIMINARY 1,0 4 8 ,5 7 6 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as

Contextual Info: 1,048,576 W O R D S x 8 BIT D YN A M IC RAM M O DULE DESCRIPTION The THM81070AS/AL and THM81070AS/AL are a 1,048,576 words by 8 bits dynamic RAM module which assembled 2 pcs of TC514400ASJ and 1 pcs of TC511000AJ/BJ on the printed circuit board, '¡'he These modules are optimized for application to the systems which are required high density and

tc514280

Abstract: TC514260BJLL TC514170 TC514260BJL TC514440 TC514260BJ
Contextual Info: X6 Capacity Type No. Max. Access Time n$ Min. Cyd Power Organization Tim$(ns) Supply (V) TC514400ASJUAZL/AFTUATRL-60 60 20 30 110 TC514400ASJUAZL7AFTUATRL-70 70 20 35 130 TC514400ASJL/AZL/AFTL/ATRL-80 80 20 40 150 80 20 40 150 80 20 40 50 13 25 TC51V4400ASJ/AFT-80

THM321000AS-60

Abstract: THM321000A ka52 THM321000ASG60 lrct CX52 THM321000AS
Contextual Info: - TOSHIBA THM321000AS/ASG -60/70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM321000A is a 1,048,576 word by 32 bit dynamic RAM module which is assembled with eight TC514400ASJ devices on the printed circuit board. This module can be used as well as 2,097,152 word by 16

Contextual Info: . - - IU 11 TC514400APL/AJL/ASJL/AZL-70, TC514400APL/AJL/ASJL/AZL-80 TC514400APL/AJL/ASJL/AZL-10 PRELIMINARY 1,048,576 WORD x 4 BIT DYNAM IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as