514400A Search Results

EJ350

Contextual Info: O K I semiconductor 514400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 514400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process

514400A

Abstract: ATR80 514400AZ ATR60
Contextual Info: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT 514400AP/AJ/ASJ-60,-70,-80 514400AZ/AFT/ATR-60,-70,-80 TENTATIVE DATA 1,048,576 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The T C 514400A P /A J/A SJ/A Z /A FT /A T R is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6

Contextual Info: 514400A S e rie s -514400AL Series Low Power Version 514400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random A c ce s s Memory HM 514400AJ/AU/ALSJ Series • DESCRIPTION The Hitachi 514400A is a C M O S dynamic RAM organized 1,048,576 word x

514400A

Abstract: 514400AJ 514400AJ-60 514400AJ-70 bas marking code a6 siemens FLH 514400AZ80 514400AZ-80 514400AJ-80
Contextual Info: Bí ñSBSbOS 0DS0447 2 ElSXEG S I E M E N ! * 47Ë V SIEMENS AKTIENGESELLSCHAF T 1M X 4-Bit Dynamic RAM W Í 2 S - / S ' HYB 514400A-60/-70/-80 A d v a n c e In fo rm atio n • • • • • • • • • • • • 1 0 48 576 words by 4-bit organization

0829A

Contextual Info: '• 't*: : ! I !•] ! i I I : i ! I i ! 1,048,576 W O R D S x 9 BIT D Y N A M IC R A M M O D U LE DESCRIPTION The THM91070AS/AL and TTIM91070AS/AL are a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of T C 514400A SJ and 1 pcs of T C 511000A J/B J on the printed circuit board.

Contextual Info: O K I semiconductor MSM514400 A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The 514400A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The tech nology used to fabricate the M SM 514400A/AL is O KI's CMOS silicon gate process

AZ60

Abstract: aj 312 TC514400AP ZIP20-P-400A 512kx4
Contextual Info: 1,048,576 W O R D x 4 B!T D Y N A M IC RA M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The T C 5 14 4 0 0 A P/A J/A SJ/A Z is the new generation dynamic RAM organized 1 ,048,576 words by 4 bits. The TC 514400A P /A J/A SJ/A Z utilizes T O SH IB A ’S CMOS Silicon gate process technology as well

Contextual Info: blE D • 44^503 GD22774 SOfl fH IT S 514400A/AL/ASL Series— 1,048,576-word X 4-bit Dynamic RAM H ITACHI/ The Hitachi HM 514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. 514400A/AL/ASL has realized higher density, higher perform ance and various functions by

Contextual Info: ^flB 56G 18 Series-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION The H B56G 18 is a 1M x 8 dynam ic RAM m odule, m ount­ ed tw o 4 M bit DRAM H M 514400AS sealed in SOJ p ack­ age. An outline o f the H B56G 18 is 30-pin single in-line p ack­

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM 51E D MM 1 b 5Q 3 OOlflS?«? fl73 • H I T S 514400A Series 514400AL Series Low P ow er Version 514400ASL Series Super Low Pow er Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory 514400AJ/AU/ALSJ Series

mr 6710

Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
Contextual Info: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The 514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide

514400A

Abstract: M514400A 514400AZ
Contextual Info: 514400A S e rie s -514400AL Series Low Power Version 514400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory 514400AJ/A LJ/A LSJ Series • DESCRIPTION The Hitachi 514400A is a C M O S dynamic RAM organized 1,048,576 word x

Contextual Info: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the 514400A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The 514400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The 514400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as

Contextual Info: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM 514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.

Contextual Info: HB56A140 Series 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM 514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single in-line package. Therefore, the HB56A140B/

512kx4

Abstract: 7150M
Contextual Info: 514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.

hyb514400aj

Abstract: 514400AJ
Contextual Info: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time

ZIP20-P-400A

Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE 514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The 514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

HM514400

Contextual Info: blE ]> • 4 4 T b 20 3 □ D 2 3 b D 3 Eb4 ■ H I T S HB56D136 Series -HITACHI/ LOGIC/ARRAYS/MEM 1,048,576-Word x 36-Bit High Density Dynamic RAM Module T h e H B 5 6 D 1 3 6 is a 1M x 3 6 d y n a m ic R A M m o d u le , m o u n te d 8 p ie c e s o f 4 -M b it D R A M

S14410

Contextual Info: O K I semiconductor MSM51441OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE/WRITE PER BIT MODE TYPE G EN ERA L DESCRIPTION The M S M 51441 OA/AL is a new generation dynamic RAM organized as 1,048,576-word x4-bit. The technology used to fabricate the M S M 51441 OA/AL is O KI's CMOS silicon gate process

Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION T H E TC514100A is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514410ASJ/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

Contextual Info: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 32200S/L-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • • 1 048 576 w ords by 9-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e -60 version

Contextual Info: HB56D232BS/SBS Series 2,097,152-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D232BS/SBS is a 2M x 32 dynamic RAM mod­ ule, mounted 16 pieces of 4 Mbit DRAM 514400AJ sealed in SOJ package. An outline of the HB56D232BS/ SBS is the 72-pin single in-line package. Therefore, the