MSM514400A Search Results

Contextual Info: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: MSM514400ASJ-70 IL22D C-MOS 4 M 1,048,576 x 4 -BIT DRAM —TOP VIEW— 5 DQ1 I/O 1 GND 26 18 17 DQ2 I/O 2 25 DQ4 I/O 16 15 WE IN 3 24 DQ3 I/O 14 12 RAS IN 4 23 CAS IN 11 10 22 OE IN A9 IN 5 9 3 22 A0 IN 9 4 18 A8 IN 23 A1 IN 10 17 A7 IN A2 IN 11 16 A6 IN

EJ350

Contextual Info: O K I semiconductor MSM514400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 514400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process

Contextual Info: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM514400A_ 1,048,576-WQRDx 4-BIT D Y N A M IC RAM : FAST PAGE M O D E TYPE GENERAL DESCRIPTION The M S M 5 1 4 4 0 0 A is a n e w g e n e ra tio n d yn a m ic R A M o rg a n iz e d as 1,048,576 w o rd s b y 4 bits.

Contextual Info: O K I semiconductor MSM514400 A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The MSM514400A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The tech nology used to fabricate the M SM 514400A/AL is O KI's CMOS silicon gate process

ZIP2Q-P-400-W1

Abstract: MSM514400A
Contextual Info: O K I Semiconductor MSM51441OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/ AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: Semiconductor OKI MSC23S132-XXBS8/PS8 1,048,576-Word x 32-Bit DRAM MODULE: FAST PAGE MODE GENERAL DESCRIPTION 0.2 ¿iF decoupling capacitors on a 72-pin glass epoxy Single-In-Line Package supports applications where high density and large capacity of storage memory are required.

20-PIN

Abstract: 26-PIN ZIP20-P-400-W1
Contextual Info: O K I Sem iconductor MSM5 14 4 0 0 A/AL 1,048,576-W ord x 4 -B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION c v -siu v iu s silicon gate proce The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES

MSM6389B

Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU

Contextual Info: O K I S em ico n d u cto r M SC23132-X X BS8/PS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE GENERAL DESCRIPTION 0.2 ¡¿F decoupling capacitors on a 72-pin glass epoxy Single-In-Line Package supports applications where high density and large capacity of storage memory are required.