MSM41464-10
Abstract: MSM41464
Contextual Info: O K I semiconductor MSM41464 65,536-WORD x 4-BIT DYNAMIC RAM PAGE MODE TYPE _ GENERAL DESCRIPTION The Oki MSM41464 is a fully decoded, dynamic NMOS random access memory organized as 65,536 words x 4 bits. The design is optimized for high-speed, high performance applications
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msm41464536-wordmsm41464-10 |
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M41464
Abstract: m41464-10 msm41464 msm41464-10 M4146410
Contextual Info: O K I semiconductor MSM41464 65,536-WORD x 4-BIT DYNAMIC RAM PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSM41464 is a fully decoded, dynamic NMOS random access memory organized as 65,536 words x 4 bits. The design is optimized for high-speed, high performance applications
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msm41464536-wordcapabili125m41464+3m41464-10msm41464-10m4146410
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MN41464-15
Abstract: MT4067-12 MB81464-10 MN41256A-8 MN41464A-8 MT1259-15 MN41464A-10 mt1259-12 ms51464 MN41464-12
Contextual Info: 185 2 5 6 K 7, a m it £ z im m m CC TRAC max ns) TRCY •in (ns) r - i MOS "/ i - y D y n a m i c RAM (2 6 2 1 4 4 x 1 ) y f t -ft TCAD T A H nin nin (ns) (ns) TP sin (ns) m y min (ns) 1C TDH nin (ns) TRffC nin (ns) V D D or V C C (V) À B IDD nax (mA)
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16pinmn41256-15mn41256a-10m14125sa-12+15ht4064-1zmt4064-15mt4064-20mt40b7-10mt4067-12mt4067-2qmn41464-15mb81464-10mn41256a-8mn41464a-8mt1259-15mn41464a-10mt1259-12ms51464mn41464-12
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toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
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km4164km41c256km41c257km41c258+15km41c464km41c466km41c1000km41c1001km41c1002km44c256toshiba 32k*8 sramm5m23c100m5m5265seeq dq2816am5m23c400mb832001hitachi 64k dramtc511000tc51464
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MN12261
Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating
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n122416-dip18-dipso-18d+1014-dlpmn12261mn1225n12cm5m4400256k ram hm6225647464mn4464mn41256a44256 ram
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ISS119
Abstract: 2SC2785-HFE v7020 2sc2785hfe rc4558p j9n99 25c2785 IC106 ic dl101 IC105
Contextual Info: C Sí£f!:J8«$ftTi-'S « S M % 36 ¥29,800 ¥ j3o tíP 1989£) 10/1 Bg mu fiííBímSt ffiffl/SS üigslJÏ a*«* tíx'TTAt¡ fx/ttati tsma tt 109x 132x 26.4mm (fi/»*/StÍ7S* 3HS^â*-r) fÛ200g t t- SU ' y v W ) 5‘C ~ 35’Û 259é~80% + 12V.+5V 1.2W
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is200g75qmbrv103579545mhz+13rv102rv104rv106iss1192sc2785-hfev70202sc2785hferc4558pj9n9925c2785ic106ic dl101ic105
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MN41464-15
Abstract: MN41464A-8 MS51464-12 MB81464-10 MN41464-12 41464 M881464 MT4067-12 MN41464AJ-12 MN41464AZ-8
Contextual Info: - 194 - 2 5 6 K nM0 S D y n a m i c RAM 6 5 53 6 x 4 % X A ••> + y 7' ÏÎ 1Í m £ tt % ¡S & ÍÉ H CO TRAC max (ns) TRCY min (ns) TCAD un (ns) TAH Din (ns) TDH (ns) WCY min (ns) TP mm V D D or V C C (ns) TRWC min (ns) (V) « I DD max (mA) 18 P I N
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mb81464-10mb81464-12m881464-12-ht4064-1z+14mt4064-15mt4064-20mt40b7-10mt4067-12mt4067-2qmt4067-80mn41464-15mn41464a-8ms51464-12mn41464-1241464m881464mn41464aj-12mn41464az-8
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MSM6389B
Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU
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md56v62160md56v62160emsm514223bmsm51c2800+14msm51c4256ml62882amsm514223cml62886msm6389bdrammsm6720msm65917msm514800cpms8104160msm41464msm5412222bmsm6591
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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km41c256km41c257km41c258km41c464+16km41c466km41c1000km41c1001km41c1002km44c256km44c258al 232 nectc55b4257mb832001nm9306eeprom cross referenced41264tc5116100hn28c256nm9307oki cross reference
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