MSM514 Search Results

MSM514900CSL

Contextual Info: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate

bq785

Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate MSM51419 0 /SL is OKI's CMOS silicon gate process technology.

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

MSM514256C

Abstract: DIP20-P-300-2 MSM514256CL
Contextual Info: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: MSM514222B-30JS 1/2 IL00 * C-MOS 1M (262,263 X 4)-BIT FIELD MEMORY -TOP VIEW4 VDD 26 (+5V) WE IN 1 RSTW IN 2 25 RE SWCK IN 3 24 RSTR 10 11 IN 12 IN 25 1 D in 0 4 23 SRCK NC 22 D out 0 D in 1 D out 1 D in 2 D out 2 D in 3 D out 3 D in 1 10 17 D out 0

mx d 362

Abstract: MSM514212ZS-28
Contextual Info: - 362 - » 1 1 t7 .« .1 D ri1 y o iii w r,V n q ¿ .K i, lU ,V J.ii, -9 n,-W t=i /-• h / i 'Jfltdt MSM514212ZS-28. -34, -50 NEC it 1135W x 8 bits 5048WX 8 bits • • • I / O - t r ^ V - h x 8bitsigf$: rK— hfHtft • FIFO fftft 5V ±10% S if . i f iS H iiiu x ? > 'M ‘ mA)

MSM514262

Abstract: MSM514262-10 MSM514262-70 MSM514262-80
Contextual Info: E2L0013-17-Y1 ¡ Semiconductor MSM514262 ¡ Semiconductor This version:MSM514262 Jan. 1998 Previous version: Dec. 1996 262,144-Word ¥ 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and

Contextual Info: OKI semiconductor_ MSC2357-XXYS8 1,048,576 Word x 32 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE ^ GENERAL DESCRIPTION The Oki MSC2357-xxYS8 is a fully decoded, 1,048,576 word by 32 bit CMOS dynamic random access memory composed of eight 4Mb DRAMs in SOJ MSM514400JS . The mounting of eight

Contextual Info: O K I Semiconductor MSM514252A 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514252A is a CMOS multiport memory composed of a 262,144-words by 4-bits dynamic random access memory, RAM port, and a 512-words by 4-bits static serial access memory, SAM

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSC2329-xxYS3KS3_ 262,144 Word BY 9 Bit DYNAMIC RAM MODULE : PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2329-xxYS3/KS3 is a fully decoded, 262,144 word x 9 bit dynamic random access memory composed of two 1 Mb DRAMs in SOJ MSM514256AJS and one 256Kb DRAM in PLCC

MSM514221-6

Abstract: TMs4C1050 MSM514221
Contextual Info: 4bE T> b72424G 0GlQ04b ATS « O K I J O K I semiconductor O K I MSM514221 SEMICONDUCTOR GROUP 262,263 w ords X 4 bits field memory GENERAL MSM514221 is a CMOS dynamic memory device organized as 256K+ 120 words by 4 bits; serial access memory that performs high speed, asynchronous read/write operation.

mx232

Abstract: YS2 100 a 741 j
Contextual Info: 4bE D • b724E4Q HOKIJ O K I semiconductor MSC2328A-XX YS2/KS2 T - 262,144 BY 8 BIT DYNAMIC RAM MODULE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 w o rd sx8 bit CMOS dynamic random access memory composed of two 1Mb DRAMs in SOJ MSM514256AJS . The mounting of two SOJs

transistor a7g

Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Contextual Info: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.

Contextual Info: MSM514265C/CSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM514265C/CSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514265C/CSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514265C/CSL is

MSM514400C/CL-60

Contextual Info: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb

Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor M SM 514800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D ESCR IPTIO N The M SM514800A/ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800A/ASL is OKI's CMOS silicon gate process

MSM514223B

Abstract: MSM514223B-40RS MSM514223B-60RS MSM518222
Contextual Info: O K I Semiconductor MSM514223B 262,263 Word x 4-Bit Field Memory DESCRIPTION The OKI MSM514223B is a high-performance 1-Meg, 256K x 4-bit field m em ory designed for high-speed serial access applications such as H igh D efinition Television HDTV , Tim e Base Correction (TBC),

Contextual Info: FEDD514400D-01 Issue Date: Mar. 8, 2011 MSM514400D 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D is a 1,048,576-word  4-bit dynamic RAM fabricated in OKI semiconductor’s silicon-gate CMOS technology. The MSM514400D achieves high integration, high-speed operation, and low-power