B72M2MD Search Results
B72M2MD Datasheets Context Search
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Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology. |
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b72m2mdmsm514256a144-word | |
514256a-10
Abstract: 514256 514256A 514256A-70 MSM514256A-70 TWC-S5
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24e40msm514256a_144-wordmsm514256a+7 | |
ECHO canceller IC
Abstract: acoustic ECHO cancel ic SM7704 7603B1
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e2u0051-16-y3msm7603bmsm7602b72m2md+5 | |
PWM dimming circuit
Abstract: analog dimming circuit KEYSCAN 12bit shift register keypad 3x4 resistor temprature detector circuit diagram for automatic voltage regulator TZ pwm ic generator oki Vacuum Fluorescent Display
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elt240msc1206-xx34-bit1206-xx+12 | |
oki m6688
Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
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msm6688msm6791m6688xxx-96q9insiai+10 | |
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Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power |
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msm5116170576-word16-bit42-pin+1 | |
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Contextual Info: O K I Semiconductor MSC23137C-XXBS9/DS9 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23137C-xxBS9/DS9 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs 1M x 4 in SOJ packages |
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msc23137c-xxbs9/ds9576-word36-bit72-pin+1 | |
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Contextual Info: O K I Semiconductor MSC23232C/C L-xxBS 16/DS16 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23232C/CL-xxBS16/DS16 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random Access Memory Module composed of sixteen 4-Mb DRAMs 1M x 4 in SOJ |
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msc23232c/c16/ds16152-word32-bit+2 | |
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Contextual Info: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5116400 is OKI's CMOS silicon gate process technology. |
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304-wordmsm5116400cycles/64mqg1733s+1 | |
RC5 IR-E
Abstract: MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM
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242i4q-zs-ts-msm514100304-wordmsm514100+9 | |
RE52
Abstract: CCA-5 MAS 10 RCD MSM514260 FKS3
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msc23b33-xxbs4/ds4288-word32-bitmsm514260+5 | |
TSCC 1100
Abstract: SI03
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b75424o001347bmsm514252144-word+2 | |
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Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and |
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msm56v16400152-wordcycles/64dd2d377 | |
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Contextual Info: O K I Semiconductor MSM51V18160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V18160A is |
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msm51v18160a576-word16-bit42-pin+1 | |
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sj 2025
Abstract: ic sj 2025 IC 2025 TMI 1480 digital thermometer secs Ishizuka Electronics lcd N7 Thermometer ic preset variable resistor DIGITAL ALARM CLOCK
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msm5052-0180-pinqfp80-p-1420-kqfp84-p-1420-bk+11 | |
Rain alarm
Abstract: FPB-04A fujikura 3c 2v lm1240 symbol oil pressure sensor M64167 0pp1 103AT-2 Ishizuka Electronics 7 segment display with alarm atmospheric pressure sensor circuit
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msm64167-00212-hour/24-hour80-pinqfp80-p-1420-k+11 | |
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Contextual Info: O K I Semiconductor MSM51 V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6170 is a1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power |
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msm51v16170576-word16-bit+3 | |
MSM514402-10
Abstract: MSM514402-70 MSM514402-80
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msm514402576-word26-pin20-pin+3 | |
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Contextual Info: O K I Semiconductor M SC23C132C/CL-XXBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23C132C/CL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages |
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sc23c132c/cl-xxbs8576-word32-bitmsc23c132c/cl-xxbs8+2 | |
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Contextual Info: O K I Semiconductor MSM538021C 1,048,576-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM538021C is a high-speed silicon gate CMOS Mask ROM with 1,048,576-word x 8-bit capac ity. The MSM538021C operates on a single 5.0 V power supply and is TTL compatible. The chip's asyn |
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msm538021c576-wordb7242m0 | |
20-PIN
Abstract: 26-PIN ZIP20-P-400-W1
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msm514400a/al_576-wordmsm514400a/alcycles/16ms+4 | |
51V1616Contextual Info: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160 achieves high integration, high-speed operation, and low-power |
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msm51v16160576-word16-bit+4 | |
st p513
Abstract: 0040H MSM65513 MSM65P513
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b7242400013flb3msm65513/65p513msm65513+5 | |