51V1616 Search Results

Contextual Info: O K I Semiconductor E 2 G 0 0 8 5 -1 7 -4 1 M SM 51V16165B/BSL_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V16165B/BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51VI6165B/ BSL achieves high integration, high-speed operation, and

MSM51V16160DSL

Contextual Info: E2G0130-17-61 O K I Semiconductor MSM5 1V I6 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM 51V16160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. The 51V16160D / DSL achieves high integration, high-speed operation,

Contextual Info: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )

Contextual Info: E2G0132-17-61 O K I Semiconductor This version: Mar. 1998 M S M 5 1V 1 6 1 6 5 D /D SL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V16165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The 51V16165D / DSL achieves high integration, high-speed operation,

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

OKI MSM 505

Abstract: 51V16160
Contextual Info: O K I Semiconductor 51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V16160A is

ATI Rage IIC

Contextual Info: INTEG R ATED T O SH IB A M O S D IG ITAL INTEG RATED CIRCUIT CIRCUIT 51V16165 G / C F T - 60 T O S H IB A TECHNICAL DATA COPY SILICON G ATE C M O S TENTATIVE D A T A 1,048,576 W O R D x 16 BIT ED O HYPER PAGE D Y N A M IC R A M DESCRIPTION The 51V16165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,043,576 words by 16 bits.

Contextual Info: O K I Semiconductor 51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the 51V16160 is OKI's CMOS silicon gate process technology.

TC51V

Abstract: TC51V16165BFT-70
Contextual Info: TOSHIBA m C|C1Ci7E4fl D02fi3flfl T07 m TC51Y16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The T C 5 1 V 1 6 1 65B F T is th e H yper P age M o d e (EDO) d yn am ic RAM organized 1 ,0 4 8 ,5 7 6 w o rd s by 16 bits. The TC 5 1 V 1 6 1 6 5 B F T utilizes Toshiba's C M O S silicon g a te p ro ce ss te c h n o lo g y as well as a d vanced circuit te ch n iq u e s to provide

OE306G

Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
Contextual Info: P art Ni mber Index K M S C 1 1 4 6 B . 3? K G F 1 145 . . 7 7 K G F 1 146 . M S C 1 1 4 9 . 7 K G F1155B . M S C 2 3 8 3 7 A . . 44 M S M 5 1 4 2 2 3 B . . 37 M S M 5 3 1 6 3 2 C .

MSM51V16165DSL

Contextual Info: E2G0132-17-61 O K I Semiconductor MSM5 1VI6165 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO D ESC R IPTIO N The 51V16165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. The 51V16165D / DSL achieves high integration, high-speed operation,

51V1616

Contextual Info: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16160 achieves high integration, high-speed operation, and low-power

DU9 308

Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.