DD1750
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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msm5117900152-word152-wcycles/32m+632pinsoj32-p-4qo42pinsoj42-p-400b754240dd1750
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DU9 308
Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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msm5117900152-wordcycles/32ms32pin+6soj32-p-4qo42pindu9 30832-pinmsm5117900-70msm5117900-80
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m51171
Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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msm51v17180576-word18-bitcycles/32ms+1m51171
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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msm51v16190576-word18-bitcycles/64ms+8bv 42 transistorm5116tsop5042-pin50-pinmsm51v16190-70msm51v16190-80tsqp28-p-400-k
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MSM5117180-70
Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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msm5117180576-word18-bitcycles/32ms+2msm5117180-70msm5117180-80
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20 TI 54240
Abstract: MSM51VI6180
Contextual Info: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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msm51v16180576-word18-bitmsm51vi6180+2cycles/64ms20 ti 54240
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32-PIN
Abstract: MSM5116900-70 MSM5116900-80 B724e
Contextual Info: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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msm5116900152-wordcycles/64ms32pin+6soj32-p-4qo42pin32-pinmsm5116900-70msm5116900-80b724e
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m51171
Abstract: m32AG M5116
Contextual Info: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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msm5116180576-word18-bitcycles/64ms+3m51171m32agm5116
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42-PIN
Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
Contextual Info: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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msm51v16180576-word18-bitmsm51vi6180+5cycles/64ms42-pinmsm51v16180-70msm51v16180-80v16180
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