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    514260B Search Results

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    514260B Price and Stock

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    Bristol Electronics TC514260BJL70 901
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    Hyundai Electronics HY514260BJC-60

    DRAM Chip FPM 4Mbit 256Kx16 5V 40-Pin SOJ
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    Bristol Electronics HY514260BJC-60 378
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    Hyundai Electronics HY514260BJC-70

    DRAM Chip FPM 4Mbit 256Kx16 5V 40-Pin SOJ
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    Bristol Electronics HY514260BJC-70 2
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    Hyundai LCD (HK) Co Ltd HY514260BJC60DR

    256K X 16, CMOS DRAM WITH /2CAS Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40
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    ComSIT USA HY514260BJC60DR 218
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    514260B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: O K I Sem iconductor 514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260B/BSL is a 262,144-word x 16-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 514260B/BSL achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal C M O S. The M SM 514260B/BSL is


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    514260b

    Abstract: 514260 M5M51426 msm514260b
    Contextual Info: O K I Sem iconductor MSM514 2 6 0 B /B S L 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M 5M 514260B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514260B/BSL is OKI's CMOS silicon gate process


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    HY514260B

    Contextual Info: »HYUNDAI 514260B Series 256K X 1 6 - b lt CMOS DRAM w ith 2CAS PRELIMINARY DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    hy514260b16-bit400mil40pin+340/44pin1ac25-00-mahy514170bjc PDF

    Contextual Info: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


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    51v16160a51v18160a116160a118160a+6256kx4514260b/bsl514256c/cl51v6800a51v16100a51v17100a PDF

    Contextual Info: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 514260BJ / BZ/ BFT/ BTR - 70 514260BJ / BZ / BFT / BTR - 80 514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION


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    HY514260B

    Abstract: HY514260BJC 404Q0 HY514260 514260
    Contextual Info: - « H Y U N D A I 514260B Series 256K x 16-bit CMOS DRAM with 2CAS DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


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    hy514260b16-bit400mil40pin+640/44pin404q0x30schy514260bjchy514260514260 PDF

    514260

    Abstract: 4C16256 IDCT NEC uPD 833 Philips SAA713 samsung i2s SAA7131 SCR PIN CONFIGURATION picture of samsung IC 9290 micron lable information
    Contextual Info: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    Contextual Info: O K I Semiconductor 514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 514260B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The 514260B/BSL is


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    msm514260b/bsl144-word16-bit40-pin+1msm514260bsl PDF

    C1617

    Abstract: HY514260 HY514260BJ
    Contextual Info: 514260B Series •HYUNDAI 256K x 16-bit CMOS DRAM with /2CAS DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipa­


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    SM511

    Contextual Info: DRAMS 1-MEG DRAMS Pins / Package Configuration M SM 5 11 6 64 B-XX Fast page 4 0 / D IP 64K x 16 80 M SM 514256C -X X Fast page 2 0 / DIP, Z IP 256K x 4 60,70,80 1 -M e g x 1 60,70, 80 Pins / Package Configuration Access Time M ax ns 64/SSO P 128K x 32 45,50


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    514256c32128-xx4280-xxmsm51v4400c/cl-xx+6514400c/cl-xx64/sso26/sojmsm514100c/cl-xx26/sosm511 PDF

    OE306G

    Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
    Contextual Info: P art Ni mber Index K M S C 1 1 4 6 B . 3? K G F 1 145 . . 7 7 K G F 1 146 . M S C 1 1 4 9 . 7 K G F1155B . M S C 2 3 8 3 7 A . . 44 M S M 5 1 4 2 2 3 B . . 37 M S M 5 3 1 6 3 2 C .


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    514260

    Abstract: NEC uPD 833 dorsch fifo buffer video audio multiplex full empty Philips SAA713 s3 924 video SAA7131 samsung i2s t1is horizonal sync interlaced
    Contextual Info: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG 1. SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    ASC 12.288

    Abstract: SAA7131 416c256-7 ISO11172 SAA7151B SAA7191B 4C1625 4C16256 SCR PIN CONFIGURATION picture scw 84
    Contextual Info: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG 1. SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    saa7131asc 12.288416c256-7iso11172+6saa7151bsaa7191b4c16254c16256scr pin configuration picturescw 84 PDF

    HYUNDAI i10

    Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
    Contextual Info: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


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    hy514260b16-bit400mil40pin+1240/44pin0063bj104b750aahyundai i10mzn 1000 shy514260bjcasw101ac25-10-may95hy51426mp331vh000gd042s3 PDF