514260B Search Results
514260B Price and Stock
Toshiba America Electronic Components TC514260BJL70 |
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TC514260BJL70 | 901 |
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Hyundai Electronics HY514260BJC-60DRAM Chip FPM 4Mbit 256Kx16 5V 40-Pin SOJ |
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HY514260BJC-60 | 378 |
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Hyundai Electronics HY514260BJC-70DRAM Chip FPM 4Mbit 256Kx16 5V 40-Pin SOJ |
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HY514260BJC-70 | 2 |
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Hyundai LCD (HK) Co Ltd HY514260BJC60DR256K X 16, CMOS DRAM WITH /2CAS Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 |
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HY514260BJC60DR | 218 |
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514260B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: O K I Sem iconductor 514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260B/BSL is a 262,144-word x 16-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 514260B/BSL achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal C M O S. The M SM 514260B/BSL is |
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msm514260b/bsl144-word16-bit514260b/bsl+2 | |
514260b
Abstract: 514260 M5M51426 msm514260b
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msm514260b/bsl144-word16-bitm5m514260b/bsl+5 | |
HY514260BContextual Info: »HYUNDAI 514260B Series 256K X 1 6 - b lt CMOS DRAM w ith 2CAS PRELIMINARY DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access |
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hy514260b16-bit400mil40pin+3 | |
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Contextual Info: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V ) |
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51v16160a51v18160a116160a118160a+6 | |
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Contextual Info: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 514260BJ / BZ/ BFT/ BTR - 70 514260BJ / BZ / BFT / BTR - 80 514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION |
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tc514260bjtc514260bj/bz/bft/btr | |
HY514260B
Abstract: HY514260BJC 404Q0 HY514260 514260
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hy514260b16-bit400mil40pin+6 | |
514260
Abstract: 4C16256 IDCT NEC uPD 833 Philips SAA713 samsung i2s SAA7131 SCR PIN CONFIGURATION picture of samsung IC 9290 micron lable information
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saa7131saa7131aiocs16n711dfl2t+9 | |
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Contextual Info: O K I Semiconductor 514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 514260B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The 514260B/BSL is |
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msm514260b/bsl144-word16-bit40-pin+1 | |
C1617
Abstract: HY514260 HY514260BJ
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16-bithy514260bhy514260bjchy514260bljc+7 | |
SM511Contextual Info: DRAMS 1-MEG DRAMS Pins / Package Configuration M SM 5 11 6 64 B-XX Fast page 4 0 / D IP 64K x 16 80 M SM 514256C -X X Fast page 2 0 / DIP, Z IP 256K x 4 60,70,80 1 -M e g x 1 60,70, 80 Pins / Package Configuration Access Time M ax ns 64/SSO P 128K x 32 45,50 |
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514256c32128-xx4280-xxmsm51v4400c/cl-xx+6 | |
OE306G
Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
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f1155bf1156kgf1191f1254b+8 | |
514260
Abstract: NEC uPD 833 dorsch fifo buffer video audio multiplex full empty Philips SAA713 s3 924 video SAA7131 samsung i2s t1is horizonal sync interlaced
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saa7131saa7131aiocs16n110fl2fa+9 | |
ASC 12.288
Abstract: SAA7131 416c256-7 ISO11172 SAA7151B SAA7191B 4C1625 4C16256 SCR PIN CONFIGURATION picture scw 84
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saa7131asc 12.288416c256-7iso11172+6 | |
HYUNDAI i10
Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
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hy514260b16-bit400mil40pin+12 | |
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